Nitride multiple quantum well challenge

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F20%3A00540792" target="_blank" >RIV/68378271:_____/20:00540792 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Nitride multiple quantum well challenge

Popis výsledku v původním jazyce

InGaN/GaN multiple quantum well (QW) structures are also potential candidates for scintillation detectors. This application needs completely different design of the heterostructure in comparison with LED one. It opens new problems that have not been solved yet. Main technological challenge for scintillator structure design is the demand for thick active regions with a higher number of QWs compared to that for LED structures due to the high penetration depth like high energy electrons or X-ray radiation. Another challenge is usually extremely low excitation intensity of ionizing radiation. Under such conditions, the excitonic QW luminescence can have even lower intensity than different kinds of defect bands originating either in GaN or in InGaN QWs. Our ability to realize scintillators on an InGaN/GaN base will be presented and influence of number of QWs in the structure on luminescence properties will described and discussed.

Název v anglickém jazyce

Nitride multiple quantum well challenge

Popis výsledku anglicky

InGaN/GaN multiple quantum well (QW) structures are also potential candidates for scintillation detectors. This application needs completely different design of the heterostructure in comparison with LED one. It opens new problems that have not been solved yet. Main technological challenge for scintillator structure design is the demand for thick active regions with a higher number of QWs compared to that for LED structures due to the high penetration depth like high energy electrons or X-ray radiation. Another challenge is usually extremely low excitation intensity of ionizing radiation. Under such conditions, the excitonic QW luminescence can have even lower intensity than different kinds of defect bands originating either in GaN or in InGaN QWs. Our ability to realize scintillators on an InGaN/GaN base will be presented and influence of number of QWs in the structure on luminescence properties will described and discussed.

Druh

D - Stať ve sborníku

CEP obor

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OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

<a href="/cs/project/LO1603" target="_blank" >LO1603: Centrum technologie a pokročilé strukturní analýzy aplikačně významných materiálů</a><br>

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2020

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

20th Conference of Czech and Slovak Physicists Proceedings

ISBN

978-80-89855-13-1

ISSN

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e-ISSN

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Počet stran výsledku

2

Strana od-do

69-70

Název nakladatele

Slovak Physical Society, Czech Physical Society

Místo vydání

Košice

Místo konání akce

Prague

Datum konání akce

7. 9. 2020

Typ akce podle státní příslušnosti

EUR - Evropská akce

Kód UT WoS článku

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