MOVPE growth of InGaN/GaN MQW nitride scintillator structure

Kód výsledku v IS VaVaI

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Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

MOVPE growth of InGaN/GaN MQW nitride scintillator structure

Popis výsledku v původním jazyce

Fast scintillators with decay time of few nanoseconds are necessary for scanning electron microscopes in inspection machines in electronic industry. Serious morphological problem of the InGaN/GaN MQWs is formation of V-pits. These V-pits originate in InGaN QWs and they are created due to dislocations. InGaN/GaN structures with a different number of QWs and different thickness of GaN covering layers were grown, measured by AFM and their photoluminescence (PL) properties were compared. V-pit size (depth and diameter) depends on the total thickness of InGaN layers and on the growth rate, not on the capping layer thickness. Fast exciton QW PL can be increased by the thickness of GaN capping layer, higher In content and lower growth rate of the capping layer.n

Název v anglickém jazyce

MOVPE growth of InGaN/GaN MQW nitride scintillator structure

Popis výsledku anglicky

Fast scintillators with decay time of few nanoseconds are necessary for scanning electron microscopes in inspection machines in electronic industry. Serious morphological problem of the InGaN/GaN MQWs is formation of V-pits. These V-pits originate in InGaN QWs and they are created due to dislocations. InGaN/GaN structures with a different number of QWs and different thickness of GaN covering layers were grown, measured by AFM and their photoluminescence (PL) properties were compared. V-pit size (depth and diameter) depends on the total thickness of InGaN layers and on the growth rate, not on the capping layer thickness. Fast exciton QW PL can be increased by the thickness of GaN capping layer, higher In content and lower growth rate of the capping layer.n

Druh

O - Ostatní výsledky

CEP obor

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OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2017

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů