Influence of GaN buffer layer under InGaN/GaN MQWs on luminescent properties

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F19%3A00505794" target="_blank" >RIV/68378271:_____/19:00505794 - isvavai.cz</a>

Výsledek na webu

<a href="https://doi.org/10.1016/j.jcrysgro.2018.11.025" target="_blank" >https://doi.org/10.1016/j.jcrysgro.2018.11.025</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.jcrysgro.2018.11.025" target="_blank" >10.1016/j.jcrysgro.2018.11.025</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Influence of GaN buffer layer under InGaN/GaN MQWs on luminescent properties

Popis výsledku v původním jazyce

Although InGaN layers or InGaN/GaN superlattices are commonly used as efficiency improving buffers for LED structure production, there is still a controversy and active discussion about the mechanisms improving the luminescence properties of InGaN QWs grown above such buffers. In this manuscript it is shown that presence of In in the buffer layer is not the primary reason for photoluminescence improvement which can be also achieved by introduction of GaN buffer layer grown at lower temperature under nitrogen atmosphere. SIMS analysis suggests that low temperature buffer layer does not influence the impurity incorporation and hence the PL improvement is caused by suppressed contamination of MQW region grown above the low temperature buffer. AFM images for two samples that differ mostly in morphology however supports another explanation in which formation of larger V-pits is the main reason for the luminescence improvement.

Název v anglickém jazyce

Influence of GaN buffer layer under InGaN/GaN MQWs on luminescent properties

Popis výsledku anglicky

Although InGaN layers or InGaN/GaN superlattices are commonly used as efficiency improving buffers for LED structure production, there is still a controversy and active discussion about the mechanisms improving the luminescence properties of InGaN QWs grown above such buffers. In this manuscript it is shown that presence of In in the buffer layer is not the primary reason for photoluminescence improvement which can be also achieved by introduction of GaN buffer layer grown at lower temperature under nitrogen atmosphere. SIMS analysis suggests that low temperature buffer layer does not influence the impurity incorporation and hence the PL improvement is caused by suppressed contamination of MQW region grown above the low temperature buffer. AFM images for two samples that differ mostly in morphology however supports another explanation in which formation of larger V-pits is the main reason for the luminescence improvement.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2019

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Crystal Growth

ISSN

0022-0248

e-ISSN

—

Svazek periodika

507

Číslo periodika v rámci svazku

Feb

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

5

Strana od-do

246-250

Kód UT WoS článku

000455667500041

EID výsledku v databázi Scopus

2-s2.0-85057497030