General overview of GaN devices and transport properties of AlGaN/GaN HEMT structures - impact of dislocation density and improved design

Kód výsledku v IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F21%3A00561007" target="_blank" >RIV/68378271:_____/21:00561007 - isvavai.cz</a>
Výsledek na webu
<a href="https://www.confer.cz/nanocon/2021/4309-general-over-view-of-gan-devices-and-transport-properties-of-algan-gan-hemt-structures-impact-of-dislocation-density-and-improved-design" target="_blank" >https://www.confer.cz/nanocon/2021/4309-general-over-view-of-gan-devices-and-transport-properties-of-algan-gan-hemt-structures-impact-of-dislocation-density-and-improved-design</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.37904/nanocon.2021.4309" target="_blank" >10.37904/nanocon.2021.4309</a>

Jazyk výsledku
angličtina
Název v původním jazyce
General overview of GaN devices and transport properties of AlGaN/GaN HEMT structures - impact of dislocation density and improved design
Popis výsledku v původním jazyce
GaN-based nanostructures are used for many present semiconductor devices. The main topics are structures for blue LEDs and LDs, but there are also other interesting and important GaN devices namely for power electronics, scintillators and detectors as well as High Electron Mobility Transistors (HEMT). Reduction of dislocation density considerably increases electron mobility in 2DEG. All presented results support our expectation that a suitably designed AlGaN back barrier can help to prevent this phenomenon.
Název v anglickém jazyce
General overview of GaN devices and transport properties of AlGaN/GaN HEMT structures - impact of dislocation density and improved design
Popis výsledku anglicky
GaN-based nanostructures are used for many present semiconductor devices. The main topics are structures for blue LEDs and LDs, but there are also other interesting and important GaN devices namely for power electronics, scintillators and detectors as well as High Electron Mobility Transistors (HEMT). Reduction of dislocation density considerably increases electron mobility in 2DEG. All presented results support our expectation that a suitably designed AlGaN back barrier can help to prevent this phenomenon.

Druh
D - Stať ve sborníku
CEP obor
—
OECD FORD obor
10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt
Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.
Návaznosti
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění
2021
Kód důvěrnosti údajů
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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