Enhancing of the GaN HEMTs Devices through Advanced Innovative Topologies

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F24%3A00380787" target="_blank" >RIV/68407700:21230/24:00380787 - isvavai.cz</a>

Výsledek na webu

<a href="https://doi.org/10.1109/ASDAM63148.2024.10844652" target="_blank" >https://doi.org/10.1109/ASDAM63148.2024.10844652</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1109/ASDAM63148.2024.10844652" target="_blank" >10.1109/ASDAM63148.2024.10844652</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Enhancing of the GaN HEMTs Devices through Advanced Innovative Topologies

Popis výsledku v původním jazyce

The widespread adoption of the wide bandgap AlGaN/GaN High Electron Mobility Transistors (HEMTs) is limited mainly due to their higher cost compared to silicon devices. Even so, for power conversion and RF applications, AlGaN/GaN HEMTs offer a better alternative to silicon device. This article described fabricated innovative AlGaN/GaN HEMTs on Si based on Asymmetric waffle, Square waffle and Octagon waffle gate patterns which refer to conventional Finger structures. We have analyzed the topologies in terms of specific resistance reduction that can lead to area savings and thus cost reduction. The 2D simulation and DC Measurements of involved devices confirm the suppression of the specific resistance for Asymmetric waffle, Square waffle and Octagon waffle gate patterns, by 36%, 40% and 43% respectively, comparing to the Finger topology.

Název v anglickém jazyce

Enhancing of the GaN HEMTs Devices through Advanced Innovative Topologies

Popis výsledku anglicky

The widespread adoption of the wide bandgap AlGaN/GaN High Electron Mobility Transistors (HEMTs) is limited mainly due to their higher cost compared to silicon devices. Even so, for power conversion and RF applications, AlGaN/GaN HEMTs offer a better alternative to silicon device. This article described fabricated innovative AlGaN/GaN HEMTs on Si based on Asymmetric waffle, Square waffle and Octagon waffle gate patterns which refer to conventional Finger structures. We have analyzed the topologies in terms of specific resistance reduction that can lead to area savings and thus cost reduction. The 2D simulation and DC Measurements of involved devices confirm the suppression of the specific resistance for Asymmetric waffle, Square waffle and Octagon waffle gate patterns, by 36%, 40% and 43% respectively, comparing to the Finger topology.

Druh

D - Stať ve sborníku

CEP obor

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OECD FORD obor

20201 - Electrical and electronic engineering

Projekt

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Návaznosti

S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2024

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

ASDAM 2024

ISBN

979-8-3315-4060-9

ISSN

2474-9737

e-ISSN

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Počet stran výsledku

4

Strana od-do

1-4

Název nakladatele

Institute of Electrical Engineering Slovak Academy of Sciences Bratislava

Místo vydání

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Místo konání akce

Smolenice Castle, Slovakia

Datum konání akce

20. 10. 2024

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

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