Physical properties of Al doped Ba hexagonal ferrite thin films

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F13%3A10159038" target="_blank" >RIV/00216208:11320/13:10159038 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/61989100:27350/13:86088670

Výsledek na webu

<a href="http://dx.doi.org/10.1063/1.4788699" target="_blank" >http://dx.doi.org/10.1063/1.4788699</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1063/1.4788699" target="_blank" >10.1063/1.4788699</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Physical properties of Al doped Ba hexagonal ferrite thin films

Popis výsledku v původním jazyce

We developed the thin film microwave magnetic material, M-type barium hexagonal ferrite (BaM) doped with Al, for signal processing devices operating above 40 GHz with little to no applied magnetic field. Al was chosen as the dopant material because it significantly increases the already strong anisotropy field of BaM. A series of thin film BaAlxFe12-xO19 samples, x ranging from 0 to 2 in 0.25 steps, were deposited on Pt templates using a metal-organic decomposition growth technique. The resulting filmsare polycrystalline and highly textured, with the hexagonal c-axis directed out of plane. These films are also self-biasing; easy axis hysteresis loops have a high squareness ratio, s, in the 0.83-0.92 range. As expected, the anisotropy field increases with x, ranging from 1.34 to 2.19 x 10(6) A/m (16.9-27.5 kOe) for x = 0-2, while the saturation magnetization M-s decreases with x, ranging from 0.334 to 0.175 x 10(6) A/m (4 pi M-s = 4.2-2.2 kG) for x = 0-2. These values were measured at

Název v anglickém jazyce

Physical properties of Al doped Ba hexagonal ferrite thin films

Popis výsledku anglicky

We developed the thin film microwave magnetic material, M-type barium hexagonal ferrite (BaM) doped with Al, for signal processing devices operating above 40 GHz with little to no applied magnetic field. Al was chosen as the dopant material because it significantly increases the already strong anisotropy field of BaM. A series of thin film BaAlxFe12-xO19 samples, x ranging from 0 to 2 in 0.25 steps, were deposited on Pt templates using a metal-organic decomposition growth technique. The resulting filmsare polycrystalline and highly textured, with the hexagonal c-axis directed out of plane. These films are also self-biasing; easy axis hysteresis loops have a high squareness ratio, s, in the 0.83-0.92 range. As expected, the anisotropy field increases with x, ranging from 1.34 to 2.19 x 10(6) A/m (16.9-27.5 kOe) for x = 0-2, while the saturation magnetization M-s decreases with x, ranging from 0.334 to 0.175 x 10(6) A/m (4 pi M-s = 4.2-2.2 kG) for x = 0-2. These values were measured at

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

<a href="/cs/project/GAP205%2F11%2F2137" target="_blank" >GAP205/11/2137: Magnetofotonické interakce v reálných nanostrukturách</a><br>

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2013

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Applied Physics

ISSN

0021-8979

e-ISSN

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Svazek periodika

113

Číslo periodika v rámci svazku

4

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

12

Strana od-do

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Kód UT WoS článku

000314724500061

EID výsledku v databázi Scopus

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