Deposition of rutile (TiO2) with preferred orientation by assisted high power impulse magnetron sputtering

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F13%3A10191439" target="_blank" >RIV/00216208:11320/13:10191439 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/68378271:_____/13:00393045

Výsledek na webu

<a href="http://dx.doi.org/10.1016/j.surfcoat.2013.02.012" target="_blank" >http://dx.doi.org/10.1016/j.surfcoat.2013.02.012</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.surfcoat.2013.02.012" target="_blank" >10.1016/j.surfcoat.2013.02.012</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Deposition of rutile (TiO2) with preferred orientation by assisted high power impulse magnetron sputtering

Popis výsledku v původním jazyce

The effect of energetic ion bombardment on TiO2 crystallographic phase formation was studied. Films were deposited using high-power impulse magnetron sputtering (HiPIMS) assisted by an electron cyclotron wave resonance (ECWR) plasma. The ECWR assistanceallows a significant reduction of pressure down to 0.075 Pa during reactive HiPIMS deposition and subsequently enables control of the energy of the deposited species over a wide range. Films deposited at high ion energies and deposition rates form rutilewith (101) a preferred orientation. With decreasing ion energy and deposition rates, rutile is formed with random crystallite orientation, and finally at low ion energies the anatase phase occurs. It is supposed that particles gain high energy during the HiPIMS pulse while the ECWR discharge is mostly responsible for substrate heating due to dissipated power. However, the energetic contribution of the ECWR discharge is not sufficient for annealing and phase transformation.

Název v anglickém jazyce

Deposition of rutile (TiO2) with preferred orientation by assisted high power impulse magnetron sputtering

Popis výsledku anglicky

The effect of energetic ion bombardment on TiO2 crystallographic phase formation was studied. Films were deposited using high-power impulse magnetron sputtering (HiPIMS) assisted by an electron cyclotron wave resonance (ECWR) plasma. The ECWR assistanceallows a significant reduction of pressure down to 0.075 Pa during reactive HiPIMS deposition and subsequently enables control of the energy of the deposited species over a wide range. Films deposited at high ion energies and deposition rates form rutilewith (101) a preferred orientation. With decreasing ion energy and deposition rates, rutile is formed with random crystallite orientation, and finally at low ion energies the anatase phase occurs. It is supposed that particles gain high energy during the HiPIMS pulse while the ECWR discharge is mostly responsible for substrate heating due to dissipated power. However, the energetic contribution of the ECWR discharge is not sufficient for annealing and phase transformation.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BL - Fyzika plasmatu a výboje v plynech

OECD FORD obor

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Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2013

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Surface and Coatings Technology

ISSN

0257-8972

e-ISSN

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Svazek periodika

222

Číslo periodika v rámci svazku

květen

Stát vydavatele periodika

CH - Švýcarská konfederace

Počet stran výsledku

6

Strana od-do

112-117

Kód UT WoS článku

000318135100016

EID výsledku v databázi Scopus

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