Emergence of state at Fermi level due to the formation of In-Sn heterodimers on Si(100)-2 x 1

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F13%3A10191451" target="_blank" >RIV/00216208:11320/13:10191451 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1103/PhysRevB.88.205406" target="_blank" >http://dx.doi.org/10.1103/PhysRevB.88.205406</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1103/PhysRevB.88.205406" target="_blank" >10.1103/PhysRevB.88.205406</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Emergence of state at Fermi level due to the formation of In-Sn heterodimers on Si(100)-2 x 1

Popis výsledku v původním jazyce

Structure and electronic properties of one-dimensional bimetallic In-Sn chains formed by codeposition on a Si(100)-2x1 surface are studied experimentally by means of scanning tunneling microscopy (STM) and scanning tunneling spectroscopy and theoretically using density-functional theory. The codeposition of In with a small amount of Sn allows separation of various In-Sn structures and their identification in empty-state STM images. A 16 x 2 supercell is employed to model an indium atomic chain in whichone or two Sn atoms are embedded. This atomic model is used to identify unambiguously various In-Sn structures observed experimentally. At low Sn: In ratio the codeposition results in strongly preferential formation of isolated heterogeneous In-Sn dimers. The In-Sn dimer induces tilting of the neighboring homogeneous In-In dimer accompanied with a charge transfer. Consequently a localized state at Fermi level appears. These results contribute to a discussion on possible transport of elec

Název v anglickém jazyce

Emergence of state at Fermi level due to the formation of In-Sn heterodimers on Si(100)-2 x 1

Popis výsledku anglicky

Structure and electronic properties of one-dimensional bimetallic In-Sn chains formed by codeposition on a Si(100)-2x1 surface are studied experimentally by means of scanning tunneling microscopy (STM) and scanning tunneling spectroscopy and theoretically using density-functional theory. The codeposition of In with a small amount of Sn allows separation of various In-Sn structures and their identification in empty-state STM images. A 16 x 2 supercell is employed to model an indium atomic chain in whichone or two Sn atoms are embedded. This atomic model is used to identify unambiguously various In-Sn structures observed experimentally. At low Sn: In ratio the codeposition results in strongly preferential formation of isolated heterogeneous In-Sn dimers. The In-Sn dimer induces tilting of the neighboring homogeneous In-In dimer accompanied with a charge transfer. Consequently a localized state at Fermi level appears. These results contribute to a discussion on possible transport of elec

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BL - Fyzika plasmatu a výboje v plynech

OECD FORD obor

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Projekt

<a href="/cs/project/GAP204%2F10%2F0952" target="_blank" >GAP204/10/0952: Studium bimetalických nanostruktur na povrchu Si(100) v atomárním měřítku</a><br>

Návaznosti

S - Specificky vyzkum na vysokych skolach<br>I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2013

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Physical Review B - Condensed Matter and Materials Physics

ISSN

1098-0121

e-ISSN

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Svazek periodika

88

Číslo periodika v rámci svazku

20

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

7

Strana od-do

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Kód UT WoS článku

000326821200003

EID výsledku v databázi Scopus

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