Rapid thermal synthesis of GaN nanocrystals and nanodisks

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F13%3A10192073" target="_blank" >RIV/00216208:11320/13:10192073 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/61388963:_____/13:00393052 RIV/60461373:22310/13:43895378

Výsledek na webu

<a href="http://dx.doi.org/10.1007/s11051-012-1411-6" target="_blank" >http://dx.doi.org/10.1007/s11051-012-1411-6</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1007/s11051-012-1411-6" target="_blank" >10.1007/s11051-012-1411-6</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Rapid thermal synthesis of GaN nanocrystals and nanodisks

Popis výsledku v původním jazyce

Gallium nitride materials are at the forefront of nanoelectronic research due to their importance for UV optoelectronics. In this contribution, we present a facile and well-controlled synthesis of GaN nanodisks by rapid thermal ammonolysis of complex gallium fluoride precursor. We observed the formation of GaN nanodisks in 150 s at 800 degrees C. The structural properties of GaN were investigated by X-ray diffraction, Raman spectroscopy, and micro-photoluminescence. The morphology of GaN was investigated by scanning electron microscopy and the magnetic properties by superconducting quantum interference device (SQUID) techniques. The morphology of nanodisks was strongly influenced by the temperature of synthesis. The structure characterization shows a high concentration of defects related mainly to the vacancies of N and Ga. The magnetic measurement by SQUID shows paramagnetic behavior induced by structure defects. These findings have a strong implication on the construction of modern o

Název v anglickém jazyce

Rapid thermal synthesis of GaN nanocrystals and nanodisks

Popis výsledku anglicky

Gallium nitride materials are at the forefront of nanoelectronic research due to their importance for UV optoelectronics. In this contribution, we present a facile and well-controlled synthesis of GaN nanodisks by rapid thermal ammonolysis of complex gallium fluoride precursor. We observed the formation of GaN nanodisks in 150 s at 800 degrees C. The structural properties of GaN were investigated by X-ray diffraction, Raman spectroscopy, and micro-photoluminescence. The morphology of GaN was investigated by scanning electron microscopy and the magnetic properties by superconducting quantum interference device (SQUID) techniques. The morphology of nanodisks was strongly influenced by the temperature of synthesis. The structure characterization shows a high concentration of defects related mainly to the vacancies of N and Ga. The magnetic measurement by SQUID shows paramagnetic behavior induced by structure defects. These findings have a strong implication on the construction of modern o

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

—

Návaznosti

S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2013

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Nanoparticle Research

ISSN

1388-0764

e-ISSN

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Svazek periodika

15

Číslo periodika v rámci svazku

1

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

7

Strana od-do

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Kód UT WoS článku

000318550000094

EID výsledku v databázi Scopus

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