The role of the space charge region in surface photovoltaic effect

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F14%3A10283093" target="_blank" >RIV/00216208:11320/14:10283093 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1063/1.4893973" target="_blank" >http://dx.doi.org/10.1063/1.4893973</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1063/1.4893973" target="_blank" >10.1063/1.4893973</a>

Jazyk výsledku

angličtina

Název v původním jazyce

The role of the space charge region in surface photovoltaic effect

Popis výsledku v původním jazyce

The surface photovoltage method is an important tool for semiconductor characterization. Evaluation of photocarrier diffusion length represents one of the most essential applications of this method. The technique is usually limited to samples with thickneutral bulk and thin space charge region (SCR) at the illuminated surface. The purpose of this paper is to remove these restrictions by introducing a more general model. Two different transport processes for the photogenerated carriers are assumed: drift in the SCR and diffusion in the neutral bulk. It was found that the SCR and the bulk contribute to the overall signal independently even in the case of recombination in the depletion region. The presented surface photovoltage technique was successfullyapplied to samples of different thickness and with differently thick space charge region at the surface. The diffusion length of the minority carrier in inorganic semiconductors as well as the diffusion length of excitons in organic mate

Název v anglickém jazyce

The role of the space charge region in surface photovoltaic effect

Popis výsledku anglicky

The surface photovoltage method is an important tool for semiconductor characterization. Evaluation of photocarrier diffusion length represents one of the most essential applications of this method. The technique is usually limited to samples with thickneutral bulk and thin space charge region (SCR) at the illuminated surface. The purpose of this paper is to remove these restrictions by introducing a more general model. Two different transport processes for the photogenerated carriers are assumed: drift in the SCR and diffusion in the neutral bulk. It was found that the SCR and the bulk contribute to the overall signal independently even in the case of recombination in the depletion region. The presented surface photovoltage technique was successfullyapplied to samples of different thickness and with differently thick space charge region at the surface. The diffusion length of the minority carrier in inorganic semiconductors as well as the diffusion length of excitons in organic mate

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

—

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2014

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Applied Physics

ISSN

0021-8979

e-ISSN

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Svazek periodika

116

Číslo periodika v rámci svazku

8

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

8

Strana od-do

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Kód UT WoS článku

000342821600035

EID výsledku v databázi Scopus

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