Electronic Pulse Shape Formation in Transient Charge and Transient Current Detection Approach in (CdZn) Te Detectors

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F14%3A10283609" target="_blank" >RIV/00216208:11320/14:10283609 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1109/TNS.2014.2330070" target="_blank" >http://dx.doi.org/10.1109/TNS.2014.2330070</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1109/TNS.2014.2330070" target="_blank" >10.1109/TNS.2014.2330070</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Electronic Pulse Shape Formation in Transient Charge and Transient Current Detection Approach in (CdZn) Te Detectors

Popis výsledku v původním jazyce

The transient-charge technique (TChT) and transient-current technique (TCT) belong to basic methods routinely used for the determination of transport properties of semiconductor radiation detectors. In spite of apparently definite correspondence betweenthe charge and current transients via simple differentiation or integration in time, the passing of the signal through real electronic circuits interferes with the evaluation of the transients and hampers the direct relation between TChT and TCT transients. In this paper we use in parallel both TChT and TCT for the characterization of (CdZn) Te detector and compare their output. We show how real TChT and TCT signals deviate from their ideal shape and complicate the evaluation of electron mobility from detected pulses. We conclude that whilst TCT may conveniently be used for the analysis of current waveforms and determination of carrier transit time and mobility in rather highly biased detectors, TChT is mainly useful for determining the

Název v anglickém jazyce

Electronic Pulse Shape Formation in Transient Charge and Transient Current Detection Approach in (CdZn) Te Detectors

Popis výsledku anglicky

The transient-charge technique (TChT) and transient-current technique (TCT) belong to basic methods routinely used for the determination of transport properties of semiconductor radiation detectors. In spite of apparently definite correspondence betweenthe charge and current transients via simple differentiation or integration in time, the passing of the signal through real electronic circuits interferes with the evaluation of the transients and hampers the direct relation between TChT and TCT transients. In this paper we use in parallel both TChT and TCT for the characterization of (CdZn) Te detector and compare their output. We show how real TChT and TCT signals deviate from their ideal shape and complicate the evaluation of electron mobility from detected pulses. We conclude that whilst TCT may conveniently be used for the analysis of current waveforms and determination of carrier transit time and mobility in rather highly biased detectors, TChT is mainly useful for determining the

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2014

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

IEEE Transactions on Nuclear Science

ISSN

0018-9499

e-ISSN

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Svazek periodika

61

Číslo periodika v rámci svazku

4

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

5

Strana od-do

2333-2337

Kód UT WoS článku

000343929900003

EID výsledku v databázi Scopus

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