Development of n(+) -in-p large-area silicon microstrip sensors for very high radiation environments-ATLAS12 design and initial results

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F14%3A10287582" target="_blank" >RIV/00216208:11320/14:10287582 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/68378271:_____/14:00440411

Výsledek na webu

<a href="http://dx.doi.org/10.1016/j.nima.2014.06.086" target="_blank" >http://dx.doi.org/10.1016/j.nima.2014.06.086</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.nima.2014.06.086" target="_blank" >10.1016/j.nima.2014.06.086</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Development of n(+) -in-p large-area silicon microstrip sensors for very high radiation environments-ATLAS12 design and initial results

Popis výsledku v původním jazyce

We have been developing a novel radiation tolerant n(+)-in-p silicon microstrip sensor for very high radiation environments, aiming for application in the high luminosity large hadron collider. The sensors are fabricated in 6 in., p-type, float zone wafers, where large area strip sensor designs are laid out together with a number of miniature sensors. Radiation tolerance has been studied with ATLAS07 sensors and with independent structures. The ATLAS07 design was developed into new ATLAS12 designs. TheATLAS12A large-area sensor is made towards an axial strip sensor and the ATLAS12M towards a stereo strip sensor. New features to the ATLAS12 sensors are two dicing lines: standard edge space of 910 pm and slim edge space of 450 pm, a gated punch-throughprotection structure, and connection of orphan strips in a triangular corner of stereo strips. We report the design of the ATLAS12 layouts and initial measurements of the leakage current after dicing and the resistivity of the wafers.

Název v anglickém jazyce

Development of n(+) -in-p large-area silicon microstrip sensors for very high radiation environments-ATLAS12 design and initial results

Popis výsledku anglicky

We have been developing a novel radiation tolerant n(+)-in-p silicon microstrip sensor for very high radiation environments, aiming for application in the high luminosity large hadron collider. The sensors are fabricated in 6 in., p-type, float zone wafers, where large area strip sensor designs are laid out together with a number of miniature sensors. Radiation tolerance has been studied with ATLAS07 sensors and with independent structures. The ATLAS07 design was developed into new ATLAS12 designs. TheATLAS12A large-area sensor is made towards an axial strip sensor and the ATLAS12M towards a stereo strip sensor. New features to the ATLAS12 sensors are two dicing lines: standard edge space of 910 pm and slim edge space of 450 pm, a gated punch-throughprotection structure, and connection of orphan strips in a triangular corner of stereo strips. We report the design of the ATLAS12 layouts and initial measurements of the leakage current after dicing and the resistivity of the wafers.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BF - Elementární částice a fyzika vysokých energií

OECD FORD obor

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Projekt

<a href="/cs/project/LG13009" target="_blank" >LG13009: Mezinárodní experiment ATLAS-CERN</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2014

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

ISSN

0168-9002

e-ISSN

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Svazek periodika

765

Číslo periodika v rámci svazku

neuveden

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

11

Strana od-do

80-90

Kód UT WoS článku

000344621000016

EID výsledku v databázi Scopus

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