Model thin films of Ce(III)-based mixed oxides

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F14%3A10289726" target="_blank" >RIV/00216208:11320/14:10289726 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1002/sia.5458" target="_blank" >http://dx.doi.org/10.1002/sia.5458</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1002/sia.5458" target="_blank" >10.1002/sia.5458</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Model thin films of Ce(III)-based mixed oxides

Popis výsledku v původním jazyce

Ce(III) sites on cerium oxide-based catalysts are known to be active in many reactions. In order to study the interaction of cerium dioxide with three easily oxidizable elements, aluminum, silicon, and tungsten, and to prepare multicomponent materials ofthe Ce(III) electronic structure, we followed two inverse approaches: we step-wisely deposited (i) Al, Si, or W onto CeO2(111) and (ii) CeO2 onto Al(111), Si(111), or W(110). We found out that the interaction in all cases was very strong and lead to a formation of mixed oxides of CeAlO3, Ce4.67Si3O13, and Ce6WO12 composition determined by quantitative XPS. The elements were present in Ce(III), Al(III), Si(IV), and W(VI) oxidation states, and the maximum thickness of the films was limited as thicker overlayers prevent the diffusion of the element from the substrate. Above this limit, the deposited aluminum, silicon, or tungsten formed oxides of consequently lower oxidation states on the surface before their purely elemental form was gro

Název v anglickém jazyce

Model thin films of Ce(III)-based mixed oxides

Popis výsledku anglicky

Ce(III) sites on cerium oxide-based catalysts are known to be active in many reactions. In order to study the interaction of cerium dioxide with three easily oxidizable elements, aluminum, silicon, and tungsten, and to prepare multicomponent materials ofthe Ce(III) electronic structure, we followed two inverse approaches: we step-wisely deposited (i) Al, Si, or W onto CeO2(111) and (ii) CeO2 onto Al(111), Si(111), or W(110). We found out that the interaction in all cases was very strong and lead to a formation of mixed oxides of CeAlO3, Ce4.67Si3O13, and Ce6WO12 composition determined by quantitative XPS. The elements were present in Ce(III), Al(III), Si(IV), and W(VI) oxidation states, and the maximum thickness of the films was limited as thicker overlayers prevent the diffusion of the element from the substrate. Above this limit, the deposited aluminum, silicon, or tungsten formed oxides of consequently lower oxidation states on the surface before their purely elemental form was gro

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2014

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Surface and Interface Analysis

ISSN

0142-2421

e-ISSN

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Svazek periodika

46

Číslo periodika v rámci svazku

10-11

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

4

Strana od-do

993-996

Kód UT WoS článku

000344987400071

EID výsledku v databázi Scopus

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