Diverse growth of Mn, In and Sn islands on thallium-passivated Si(111) surface

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F15%3A10319395" target="_blank" >RIV/00216208:11320/15:10319395 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1016/j.apsusc.2015.01.067" target="_blank" >http://dx.doi.org/10.1016/j.apsusc.2015.01.067</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.apsusc.2015.01.067" target="_blank" >10.1016/j.apsusc.2015.01.067</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Diverse growth of Mn, In and Sn islands on thallium-passivated Si(111) surface

Popis výsledku v původním jazyce

Controlled growth of thin films on highly reactive silicon surfaces has been a challenge for decades. High density of surface dangling bonds, however, hinders the adsorbate diffusion and its self-organization. In our work, we propose a novel use of the T1-(1 x 1) layer as a passivating agent, which highly enhances diffusion of adsorbates by saturating all dangling bonds of the Si substrate. We use room-temperature scanning tunneling microscopy to study structures formed on the Si(1 1 I)/T1 - (1 x 1) surface after deposition of submonolayer amounts of three elemental adsorbates: Mn, In and Sn. As a result, three significantly different surface structures are observed. Manganese atoms aggregate to stable dendritic islands nucleated on Si steps. Indium islands are compact and unstable during observation. Unlike Mn and In, Sn atoms intermix with Tl atoms and arrange into an array of triangular objects. The growth kinetics of the three deposited metals on the Tl - (1 x 1) layer is discussed

Název v anglickém jazyce

Diverse growth of Mn, In and Sn islands on thallium-passivated Si(111) surface

Popis výsledku anglicky

Controlled growth of thin films on highly reactive silicon surfaces has been a challenge for decades. High density of surface dangling bonds, however, hinders the adsorbate diffusion and its self-organization. In our work, we propose a novel use of the T1-(1 x 1) layer as a passivating agent, which highly enhances diffusion of adsorbates by saturating all dangling bonds of the Si substrate. We use room-temperature scanning tunneling microscopy to study structures formed on the Si(1 1 I)/T1 - (1 x 1) surface after deposition of submonolayer amounts of three elemental adsorbates: Mn, In and Sn. As a result, three significantly different surface structures are observed. Manganese atoms aggregate to stable dendritic islands nucleated on Si steps. Indium islands are compact and unstable during observation. Unlike Mn and In, Sn atoms intermix with Tl atoms and arrange into an array of triangular objects. The growth kinetics of the three deposited metals on the Tl - (1 x 1) layer is discussed

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

—

Projekt

—

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2015

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Applied Surface Science

ISSN

0169-4332

e-ISSN

—

Svazek periodika

331

Číslo periodika v rámci svazku

Mar

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

7

Strana od-do

339-345

Kód UT WoS článku

000350145700045

EID výsledku v databázi Scopus

2-s2.0-84924662624