Crystallization dynamics and interface stability of strontium titanate thin films on silicon

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F15%3A10321550" target="_blank" >RIV/00216208:11320/15:10321550 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1107/S160057671500240X" target="_blank" >http://dx.doi.org/10.1107/S160057671500240X</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1107/S160057671500240X" target="_blank" >10.1107/S160057671500240X</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Crystallization dynamics and interface stability of strontium titanate thin films on silicon

Popis výsledku v původním jazyce

Different physical vapor deposition methods have been used to fabricate strontium titanate thin films. Within the binary phase diagram of SrO and TiO2 the stoichiometry ranges from Ti rich to Sr rich, respectively. The crystallization of these amorphousSrTiO3 layers is investigated by in situ grazing-incidence X-ray diffraction using synchrotron radiation. The crystallization dynamics and evolution of the lattice constants as well as crystallite sizes of the SrTiO3 layers were determined for temperatures up to 1223K under atmospheric conditions applying different heating rates. At approximately 473K, crystallization of perovskite-type SrTiO3 is initiated for Sr-rich electron beam evaporated layers, whereas Sr-depleted sputter-deposited thin films crystallize at 739K. During annealing, a significant diffusion of Si from the substrate into the SrTiO3 layers occurs in the case of Sr-rich composition. This leads to the formation of secondary silicate phases which are observed by X-ray dif

Název v anglickém jazyce

Crystallization dynamics and interface stability of strontium titanate thin films on silicon

Popis výsledku anglicky

Different physical vapor deposition methods have been used to fabricate strontium titanate thin films. Within the binary phase diagram of SrO and TiO2 the stoichiometry ranges from Ti rich to Sr rich, respectively. The crystallization of these amorphousSrTiO3 layers is investigated by in situ grazing-incidence X-ray diffraction using synchrotron radiation. The crystallization dynamics and evolution of the lattice constants as well as crystallite sizes of the SrTiO3 layers were determined for temperatures up to 1223K under atmospheric conditions applying different heating rates. At approximately 473K, crystallization of perovskite-type SrTiO3 is initiated for Sr-rich electron beam evaporated layers, whereas Sr-depleted sputter-deposited thin films crystallize at 739K. During annealing, a significant diffusion of Si from the substrate into the SrTiO3 layers occurs in the case of Sr-rich composition. This leads to the formation of secondary silicate phases which are observed by X-ray dif

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

—

Projekt

—

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2015

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Applied Crystallography

ISSN

0021-8898

e-ISSN

—

Svazek periodika

48

Číslo periodika v rámci svazku

-

Stát vydavatele periodika

DK - Dánské království

Počet stran výsledku

8

Strana od-do

393-400

Kód UT WoS článku

000352229100010

EID výsledku v databázi Scopus

2-s2.0-84926306772