Topological insulator homojunctions including magnetic layers: The example of n-p type (n-QLs Bi2Se3/Mn-Bi2Se3) heterostructures

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F16%3A10325215" target="_blank" >RIV/00216208:11320/16:10325215 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/68378271:_____/16:00473845

Výsledek na webu

<a href="http://dx.doi.org/10.1063/1.4954834" target="_blank" >http://dx.doi.org/10.1063/1.4954834</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1063/1.4954834" target="_blank" >10.1063/1.4954834</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Topological insulator homojunctions including magnetic layers: The example of n-p type (n-QLs Bi2Se3/Mn-Bi2Se3) heterostructures

Popis výsledku v původním jazyce

Homojunctions between Bi2Se3 and its Mn-doped phase are investigated as a sample geometry to study the influence of spin degrees of freedom on topological insulator properties. n quintuple layers of Bi2Se3 are grown on top of Mn-doped Bi2Se3 by molecular beam epitaxy for 0 <= n <= 30 QLs, allowing to unhamperedly monitor the development of electronic and topological properties by surface sensitive techniques like angle resolved photoemission spectroscopy. With increasing n, a Mn-induced gap at the Dirac point is gradually filled in an "hourglass" fashion to reestablish a topological surface state at n similar to 9 QLs. Our results suggest a competition of upward and downward band bending effects due to the presence of an n-p type interface, which can be used to tailor topological and quantum well states independently. Published by AIP Publishing.

Název v anglickém jazyce

Topological insulator homojunctions including magnetic layers: The example of n-p type (n-QLs Bi2Se3/Mn-Bi2Se3) heterostructures

Popis výsledku anglicky

Homojunctions between Bi2Se3 and its Mn-doped phase are investigated as a sample geometry to study the influence of spin degrees of freedom on topological insulator properties. n quintuple layers of Bi2Se3 are grown on top of Mn-doped Bi2Se3 by molecular beam epitaxy for 0 <= n <= 30 QLs, allowing to unhamperedly monitor the development of electronic and topological properties by surface sensitive techniques like angle resolved photoemission spectroscopy. With increasing n, a Mn-induced gap at the Dirac point is gradually filled in an "hourglass" fashion to reestablish a topological surface state at n similar to 9 QLs. Our results suggest a competition of upward and downward band bending effects due to the presence of an n-p type interface, which can be used to tailor topological and quantum well states independently. Published by AIP Publishing.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2016

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Applied Physics Letters

ISSN

0003-6951

e-ISSN

—

Svazek periodika

108

Číslo periodika v rámci svazku

26

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

4

Strana od-do

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Kód UT WoS článku

000379178200024

EID výsledku v databázi Scopus

2-s2.0-84977106573