Photoluminescence of CdTe:In the spectral range around 1.1 eV

Kód výsledku v IS VaVaI

RIV/00216208:11320/16:10328934 - isvavai.cz

Výsledek na webu

http://dx.doi.org/10.1016/j.jlumin.2016.04.019

DOI - Digital Object Identifier

10.1016/j.jlumin.2016.04.019

Jazyk výsledku

angličtina

Název v původním jazyce

Photoluminescence of CdTe:In the spectral range around 1.1 eV

Popis výsledku v původním jazyce

Temperature and excitation dependences of photoluminescence (PL) spectra of a slightly In-doped CdTe crystal were investigated, particularly in the spectral range of the "1.1 eV" PL band, i.e. in the interval of 0.9-1.25 eV. Both above-bandgap and below-bandgap excitations were employed. Three components of the "1.1 eV" band with the PL maxima at around 1.19 eV, 1.13 eV, and 1.03 eV were distinguished. The component with a PL maximum at 1.19 eV vanishes above 40 K. It can be attributed to a recombination of a thermally unstable state localized at a defect. The excitation spectrum of the second component with a maximum at 1.13 eV indicates that a transition in a deep localized center takes place. The "1.13 eV" component prevails at higher temperatures with below-bandgap excitation. The "1.03 eV" component can be related to an effective recombination center, probably to a complex of deep donor and deep acceptor. This component is the strongest one at higher temperatures and under above-bandgap excitation. Our present knowledge does not allow us to attribute the PL spectra to particular defects.

Název v anglickém jazyce

Photoluminescence of CdTe:In the spectral range around 1.1 eV

Popis výsledku anglicky

Temperature and excitation dependences of photoluminescence (PL) spectra of a slightly In-doped CdTe crystal were investigated, particularly in the spectral range of the "1.1 eV" PL band, i.e. in the interval of 0.9-1.25 eV. Both above-bandgap and below-bandgap excitations were employed. Three components of the "1.1 eV" band with the PL maxima at around 1.19 eV, 1.13 eV, and 1.03 eV were distinguished. The component with a PL maximum at 1.19 eV vanishes above 40 K. It can be attributed to a recombination of a thermally unstable state localized at a defect. The excitation spectrum of the second component with a maximum at 1.13 eV indicates that a transition in a deep localized center takes place. The "1.13 eV" component prevails at higher temperatures with below-bandgap excitation. The "1.03 eV" component can be related to an effective recombination center, probably to a complex of deep donor and deep acceptor. This component is the strongest one at higher temperatures and under above-bandgap excitation. Our present knowledge does not allow us to attribute the PL spectra to particular defects.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

—

Projekt

GA15-05259S: Pasivace povrchů CdTe/CdZnTe detektorů záření.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2016

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Luminescence

ISSN

0022-2313

e-ISSN

—

Svazek periodika

177

Číslo periodika v rámci svazku

1

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

11

Strana od-do

71-81

Kód UT WoS článku

000377997700011

EID výsledku v databázi Scopus

2-s2.0-84964757864