Excitation intensity dependence of photoluminescence spectra of SiGe quantum dots grown on prepatterned Si substrates: Evidence for biexcitonic transition
Identifikátory výsledku
Kód výsledku v IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F12%3A00384869" target="_blank" >RIV/68378271:_____/12:00384869 - isvavai.cz</a>
Nalezeny alternativní kódy
RIV/00216224:14740/12:00060837
Výsledek na webu
<a href="http://dx.doi.org/10.1103/PhysRevB.86.115305" target="_blank" >http://dx.doi.org/10.1103/PhysRevB.86.115305</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1103/PhysRevB.86.115305" target="_blank" >10.1103/PhysRevB.86.115305</a>
Alternativní jazyky
Jazyk výsledku
angličtina
Název v původním jazyce
Excitation intensity dependence of photoluminescence spectra of SiGe quantum dots grown on prepatterned Si substrates: Evidence for biexcitonic transition
Popis výsledku v původním jazyce
The pumping intensity (I) dependence of the photoluminescence (PL) spectra of laterally two-dimensionally ordered SiGe quantum dots on Si(001) substrates was studied. The PL results from recombinations of holes localized in the SiGe quantum dots and electrons localized in the surrounding Si matrix. The analysis of the spectra revealed several distinct bands, attributed to phonon-assisted recombination and no-phonon recombination of the excitonic ground state and of the excited excitonic states, which all exhibit a linear I dependence of the PL intensity. At I>3 W.cm2, additional bands with a quadratic I dependence appear in the PL spectra, resulting from biexcitonic transitions. These emerging PL contributions shift the composite no-phonon PL band of the SiGe quantum dots to higher energies. The observed transition energies are in good agreement with the exciton and biexciton energies calculated using the envelope function approximation and the configuration interaction method.
Název v anglickém jazyce
Excitation intensity dependence of photoluminescence spectra of SiGe quantum dots grown on prepatterned Si substrates: Evidence for biexcitonic transition
Popis výsledku anglicky
The pumping intensity (I) dependence of the photoluminescence (PL) spectra of laterally two-dimensionally ordered SiGe quantum dots on Si(001) substrates was studied. The PL results from recombinations of holes localized in the SiGe quantum dots and electrons localized in the surrounding Si matrix. The analysis of the spectra revealed several distinct bands, attributed to phonon-assisted recombination and no-phonon recombination of the excitonic ground state and of the excited excitonic states, which all exhibit a linear I dependence of the PL intensity. At I>3 W.cm2, additional bands with a quadratic I dependence appear in the PL spectra, resulting from biexcitonic transitions. These emerging PL contributions shift the composite no-phonon PL band of the SiGe quantum dots to higher energies. The observed transition energies are in good agreement with the exciton and biexciton energies calculated using the envelope function approximation and the configuration interaction method.
Klasifikace
Druh
J<sub>x</sub> - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)
CEP obor
BM - Fyzika pevných látek a magnetismus
OECD FORD obor
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Návaznosti výsledku
Projekt
<a href="/cs/project/ED1.1.00%2F02.0068" target="_blank" >ED1.1.00/02.0068: CEITEC - central european institute of technology</a><br>
Návaznosti
Z - Vyzkumny zamer (s odkazem do CEZ)
Ostatní
Rok uplatnění
2012
Kód důvěrnosti údajů
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Údaje specifické pro druh výsledku
Název periodika
Physical Review. B
ISSN
1098-0121
e-ISSN
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Svazek periodika
86
Číslo periodika v rámci svazku
11
Stát vydavatele periodika
US - Spojené státy americké
Počet stran výsledku
8
Strana od-do
"115305-1"-"115305-8"
Kód UT WoS článku
000308288300008
EID výsledku v databázi Scopus
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