Defect studies of zirconia implanted by high energy Xe ions
Identifikátory výsledku
Kód výsledku v IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F16%3A10330793" target="_blank" >RIV/00216208:11320/16:10330793 - isvavai.cz</a>
Výsledek na webu
<a href="http://dx.doi.org/10.1088/1742-6596/674/1/012016" target="_blank" >http://dx.doi.org/10.1088/1742-6596/674/1/012016</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1088/1742-6596/674/1/012016" target="_blank" >10.1088/1742-6596/674/1/012016</a>
Alternativní jazyky
Jazyk výsledku
angličtina
Název v původním jazyce
Defect studies of zirconia implanted by high energy Xe ions
Popis výsledku v původním jazyce
In the present work positron lifetime spectroscopy was employed for characterization of radiation-induced defects in yttria stabilized zirconia (YSZ) implanted by 167 MeV Xe ions. Positron lifetime data were interpreted with aid of ab-initio theoretical modelling of defects in YSZ lattice. Damage caused by Xe implantation was investigated in two YSZ samples with different microstructure: (i) single crystal and (ii) sintered ceramic. The virgin YSZ single crystal exhibits single component spectrum with lifetime of approximate to 180 ps. Similar lifetime component was found also in the virgin sample of sintered YSZ ceramic. Since this lifetime is significantly higher than the YSZ bulk lifetime the virgin YSZ crystal and the sintered ceramic both contain vacancy-like defects. Xe implantation leads to appearance of additional defect component with longer lifetime approximate to 370 ps which comes obviously from vacancy clusters formed by agglomeration of irradiation induced vacancies. A broad absorption band with peak absorption at approximate to 518 nm was found in Xe-implanted crystal by optical measurements.
Název v anglickém jazyce
Defect studies of zirconia implanted by high energy Xe ions
Popis výsledku anglicky
In the present work positron lifetime spectroscopy was employed for characterization of radiation-induced defects in yttria stabilized zirconia (YSZ) implanted by 167 MeV Xe ions. Positron lifetime data were interpreted with aid of ab-initio theoretical modelling of defects in YSZ lattice. Damage caused by Xe implantation was investigated in two YSZ samples with different microstructure: (i) single crystal and (ii) sintered ceramic. The virgin YSZ single crystal exhibits single component spectrum with lifetime of approximate to 180 ps. Similar lifetime component was found also in the virgin sample of sintered YSZ ceramic. Since this lifetime is significantly higher than the YSZ bulk lifetime the virgin YSZ crystal and the sintered ceramic both contain vacancy-like defects. Xe implantation leads to appearance of additional defect component with longer lifetime approximate to 370 ps which comes obviously from vacancy clusters formed by agglomeration of irradiation induced vacancies. A broad absorption band with peak absorption at approximate to 518 nm was found in Xe-implanted crystal by optical measurements.
Klasifikace
Druh
D - Stať ve sborníku
CEP obor
JH - Keramika, žáruvzdorné materiály a skla
OECD FORD obor
—
Návaznosti výsledku
Projekt
<a href="/cs/project/GAP108%2F11%2F1396" target="_blank" >GAP108/11/1396: Vliv substitučních příměsí a hranic zrn na vlastnosti nanokrystalických materiálů na bázi oxidu zirkonu</a><br>
Návaznosti
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Ostatní
Rok uplatnění
2016
Kód důvěrnosti údajů
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Údaje specifické pro druh výsledku
Název statě ve sborníku
Journal of Physics: Conference Series
ISBN
—
ISSN
1742-6588
e-ISSN
—
Počet stran výsledku
8
Strana od-do
—
Název nakladatele
IOP PUBLISHING LTD
Místo vydání
BRISTOL
Místo konání akce
Kyoto
Datum konání akce
14. 9. 2014
Typ akce podle státní příslušnosti
WRD - Celosvětová akce
Kód UT WoS článku
000382077100016