Characterisation of irradiation-induced defects in ZnO single crystals

Kód výsledku v IS VaVaI

RIV/61389005:_____/16:00463306 - isvavai.cz

Nalezeny alternativní kódy

RIV/00216208:11320/16:10330447

Výsledek na webu

http://dx.doi.org/10.1088/1742-6596/674/1/012014

DOI - Digital Object Identifier

10.1088/1742-6596/674/1/012014

Jazyk výsledku

angličtina

Název v původním jazyce

Characterisation of irradiation-induced defects in ZnO single crystals

Popis výsledku v původním jazyce

Positron annihilation spectroscopy (PAS) combined with optical methods was employed for characterisation of defects in the hydrothermally grown ZnO single crystals irradiated by 167 MeV Xe26+ ions to fluences ranged from 3x10(12) to 1x10(14) cm(-2). The positron lifetime (LT), Doppler broadening as well as slow-positron implantation spectroscopy (SPIS) techniques were involved. The ab-initio theoretical calculations were utilised for interpretation of LT results. The optical transmission and photoluminescence measurements were conducted, too. The virgin ZnO crystal exhibited a single component LT spectrum with a lifetime of 182 ps which is attributed to saturated positron trapping in Zn vacancies associated with hydrogen atoms unintentionally introduced into the crystal during the crystal growth. The Xe ion irradiated ZnO crystals have shown an additional component with a longer lifetime of approximate to 360 ps which comes from irradiation-induced larger defects equivalent in size to clusters of approximate to 10 to 12 vacancies. The concentrations of these clusters were estimated on the basis of combined LT and SPIS data. The PAS data were correlated with irradiation induced changes seen in the optical spectroscopy experiments.

Název v anglickém jazyce

Characterisation of irradiation-induced defects in ZnO single crystals

Popis výsledku anglicky

Positron annihilation spectroscopy (PAS) combined with optical methods was employed for characterisation of defects in the hydrothermally grown ZnO single crystals irradiated by 167 MeV Xe26+ ions to fluences ranged from 3x10(12) to 1x10(14) cm(-2). The positron lifetime (LT), Doppler broadening as well as slow-positron implantation spectroscopy (SPIS) techniques were involved. The ab-initio theoretical calculations were utilised for interpretation of LT results. The optical transmission and photoluminescence measurements were conducted, too. The virgin ZnO crystal exhibited a single component LT spectrum with a lifetime of 182 ps which is attributed to saturated positron trapping in Zn vacancies associated with hydrogen atoms unintentionally introduced into the crystal during the crystal growth. The Xe ion irradiated ZnO crystals have shown an additional component with a longer lifetime of approximate to 360 ps which comes from irradiation-induced larger defects equivalent in size to clusters of approximate to 10 to 12 vacancies. The concentrations of these clusters were estimated on the basis of combined LT and SPIS data. The PAS data were correlated with irradiation induced changes seen in the optical spectroscopy experiments.

Druh

D - Stať ve sborníku

CEP obor

BG - Jaderná, atomová a molekulová fyzika, urychlovače

OECD FORD obor

—

Projekt

GAP108/11/0958: Výzkum bodových defektů v ZnO a studium jejich interakce s vodíkem a dusíkem

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2016

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

Journal of Physics Conference Series

ISBN

—

ISSN

1742-6588

e-ISSN

—

Počet stran výsledku

9

Strana od-do

—

Název nakladatele

IOP Publishing

Místo vydání

Bristol

Místo konání akce

Kyoto

Datum konání akce

14. 9. 2014

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

000382077100014