Point defects in ZnO crystals grown by various techniques

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F17%3A10367772" target="_blank" >RIV/00216208:11320/17:10367772 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1088/1742-6596/791/1/012017" target="_blank" >http://dx.doi.org/10.1088/1742-6596/791/1/012017</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1088/1742-6596/791/1/012017" target="_blank" >10.1088/1742-6596/791/1/012017</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Point defects in ZnO crystals grown by various techniques

Popis výsledku v původním jazyce

In the present work point defects in ZnO crystals were characterized by positron lifetime spectroscopy combined with back-diffusion measurement of slow positrons. Defects in ZnO crystals grown by various techniques were compared. Hydrothermally grown ZnO crystals contain defects characterized by lifetime of approximate to 181 ps. These defects were attributed to Zn vacancies associated with hydrogen. ZnO crystals prepared by other techniques (Bridgman, pressurized melt growth, and seeded chemical vapour transport) exhibit shorter lifetime of approximate to 165 ps. Positron back-diffusion studies revealed that hydrothermally grown ZnO crystals contain higher density of defects than the crystals grown by other techniques. The lowest concentration of defects was detected in the crystal grown by seeded chemical vapor transport.

Název v anglickém jazyce

Point defects in ZnO crystals grown by various techniques

Popis výsledku anglicky

In the present work point defects in ZnO crystals were characterized by positron lifetime spectroscopy combined with back-diffusion measurement of slow positrons. Defects in ZnO crystals grown by various techniques were compared. Hydrothermally grown ZnO crystals contain defects characterized by lifetime of approximate to 181 ps. These defects were attributed to Zn vacancies associated with hydrogen. ZnO crystals prepared by other techniques (Bridgman, pressurized melt growth, and seeded chemical vapour transport) exhibit shorter lifetime of approximate to 165 ps. Positron back-diffusion studies revealed that hydrothermally grown ZnO crystals contain higher density of defects than the crystals grown by other techniques. The lowest concentration of defects was detected in the crystal grown by seeded chemical vapor transport.

Druh

D - Stať ve sborníku

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

<a href="/cs/project/7AMB15DE003" target="_blank" >7AMB15DE003: Vliv vakancí a komplexů vakancí s vodíkem na elektrické a optické vlastnosti ZnO krystalů a tenkých vrstev</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2017

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

Journal of Physics: Conference Series

ISBN

—

ISSN

1742-6588

e-ISSN

neuvedeno

Počet stran výsledku

6

Strana od-do

—

Název nakladatele

IOP PUBLISHING LTD

Místo vydání

BRISTOL

Místo konání akce

Matsue

Datum konání akce

22. 5. 2016

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

000400610500017