Synthesis of single layer graphene on Cu(111) by C-60 supersonic molecular beam epitaxy

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F16%3A10333768" target="_blank" >RIV/00216208:11320/16:10333768 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1039/c6ra02274j" target="_blank" >http://dx.doi.org/10.1039/c6ra02274j</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1039/c6ra02274j" target="_blank" >10.1039/c6ra02274j</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Synthesis of single layer graphene on Cu(111) by C-60 supersonic molecular beam epitaxy

Popis výsledku v původním jazyce

High kinetic energy impacts between inorganic surfaces and molecular beams seeded by organics represent a fundamental tool in materials science, particularly when they activate chemical-physical processes leading to nanocrystals' growth. Here we demonstrate single-layer graphene synthesis on copper by C-60 supersonic molecular beam (SuMBE) epitaxy. A growth temperature down to 645 degrees C, lower than that typical of chemical vapour deposition (1000 degrees C), is achieved by thermal decomposition of C-60 with the possibility of further reduction. Using a variety of electron spectroscopy and microscopy techniques, and first-principles simulations, we describe the chemical-physical mechanisms activated by SuMBE and assisted by thermal processes, resulting in graphene growth. In particular, we find a role of high kinetic energy deposition in enhancing the organic/inorganic interface interaction and controlling the fullerene cage openings. These results, while discussed in the specific case of graphene on copper, are potentially extendible to different metallic or semiconductor substrates and where lower processing temperature is desirable.

Název v anglickém jazyce

Synthesis of single layer graphene on Cu(111) by C-60 supersonic molecular beam epitaxy

Popis výsledku anglicky

High kinetic energy impacts between inorganic surfaces and molecular beams seeded by organics represent a fundamental tool in materials science, particularly when they activate chemical-physical processes leading to nanocrystals' growth. Here we demonstrate single-layer graphene synthesis on copper by C-60 supersonic molecular beam (SuMBE) epitaxy. A growth temperature down to 645 degrees C, lower than that typical of chemical vapour deposition (1000 degrees C), is achieved by thermal decomposition of C-60 with the possibility of further reduction. Using a variety of electron spectroscopy and microscopy techniques, and first-principles simulations, we describe the chemical-physical mechanisms activated by SuMBE and assisted by thermal processes, resulting in graphene growth. In particular, we find a role of high kinetic energy deposition in enhancing the organic/inorganic interface interaction and controlling the fullerene cage openings. These results, while discussed in the specific case of graphene on copper, are potentially extendible to different metallic or semiconductor substrates and where lower processing temperature is desirable.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BE - Teoretická fyzika

OECD FORD obor

—

Projekt

—

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2016

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

RSC Advances

ISSN

2046-2069

e-ISSN

—

Svazek periodika

6

Číslo periodika v rámci svazku

44

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

12

Strana od-do

37982-37993

Kód UT WoS článku

000374495400061

EID výsledku v databázi Scopus

2-s2.0-84966447579