Graphene growth from the metal/carbon/SiO2 structure

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F18%3A43916527" target="_blank" >RIV/60461373:22310/18:43916527 - isvavai.cz</a>

Výsledek na webu

<a href="https://content.sciendo.com/view/journals/jee/69/3/article-p239.xml" target="_blank" >https://content.sciendo.com/view/journals/jee/69/3/article-p239.xml</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.2478/jee-2018-0032" target="_blank" >10.2478/jee-2018-0032</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Graphene growth from the metal/carbon/SiO2 structure

Popis výsledku v původním jazyce

The paper presents results related to graphene growth by the method of precipitation on the boundary between a transition metal (nickel or cobalt) and a dielectric (SiO2). The source of graphene is a thin evaporated carbon layer. Carbon in the annealing process diffunds through the transition metal and precipitates on the surface of the dielectric substrate as the structure cools down. Relatively thick layer of copper, which is evaporated over carbon as a cover, prevents carbon to diffund to the surface of the metallization. The structure of the metallization for graphene forming is then Cu/C/(transition metal)/SiO2/Si. We consider the utilization of the diffusion barrier to be the contribution of our work to graphene formation using this method. Even though both transition metals are of similar features, the necessary conditions for growth of high-quality graphene are different. In case of nickel, long annealing times within the whole range of annealing temperatures are necessary, while in case of structures with cobalt annealing time of 20 minutes at 900 degrees C is enough for graphene growth. By annealing the Cu(300 nm)/C(20 nm)/Ni(50 nm)/SiO2 structure at the temperature of 800 degrees C for 60 minutes we obtained single-layer graphene (SLG).

Název v anglickém jazyce

Graphene growth from the metal/carbon/SiO2 structure

Popis výsledku anglicky

The paper presents results related to graphene growth by the method of precipitation on the boundary between a transition metal (nickel or cobalt) and a dielectric (SiO2). The source of graphene is a thin evaporated carbon layer. Carbon in the annealing process diffunds through the transition metal and precipitates on the surface of the dielectric substrate as the structure cools down. Relatively thick layer of copper, which is evaporated over carbon as a cover, prevents carbon to diffund to the surface of the metallization. The structure of the metallization for graphene forming is then Cu/C/(transition metal)/SiO2/Si. We consider the utilization of the diffusion barrier to be the contribution of our work to graphene formation using this method. Even though both transition metals are of similar features, the necessary conditions for growth of high-quality graphene are different. In case of nickel, long annealing times within the whole range of annealing temperatures are necessary, while in case of structures with cobalt annealing time of 20 minutes at 900 degrees C is enough for graphene growth. By annealing the Cu(300 nm)/C(20 nm)/Ni(50 nm)/SiO2 structure at the temperature of 800 degrees C for 60 minutes we obtained single-layer graphene (SLG).

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

20501 - Materials engineering

Projekt

<a href="/cs/project/GA17-00607S" target="_blank" >GA17-00607S: Komplexní umělé elektromagnetické struktury a nanostruktury</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2018

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Electric Engineering (Elektrotechnicky Casopis)

ISSN

1335-3632

e-ISSN

—

Svazek periodika

69

Číslo periodika v rámci svazku

3

Stát vydavatele periodika

SK - Slovenská republika

Počet stran výsledku

6

Strana od-do

239-244

Kód UT WoS článku

000440649100008

EID výsledku v databázi Scopus

—