Synthesis of graphene on Co/SiC structure

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F13%3A43896494" target="_blank" >RIV/60461373:22310/13:43896494 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/68378271:_____/13:00436933

Výsledek na webu

<a href="http://dx.doi.org/10.1007/s10854-013-1320-1" target="_blank" >http://dx.doi.org/10.1007/s10854-013-1320-1</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1007/s10854-013-1320-1" target="_blank" >10.1007/s10854-013-1320-1</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Synthesis of graphene on Co/SiC structure

Popis výsledku v původním jazyce

Bi-layer graphene sheets have been prepared on the basis of a reaction of cobalt with silicon carbide at temperatures around 1,000 A degrees C. This is a type of viable low temperature graphene synthesis. Preparation of graphene was carried out with various thicknesses of the Co layer deposited onto the SiC surface and parameters of the annealing process (temperature, annealing time) were varied. Number of carbon mono-layers in the prepared graphene and its crystallinity were determined from the resultsof Raman spectroscopy. The best results have been obtained for a structure with Cobalt layer of 300 nm thickness, annealed at 1,080 A degrees C for the period of 120 s. When using shorter annealing times, significantly non-homogenous reaction of Co withSiC has been observed, forming two different phases on the surface.

Název v anglickém jazyce

Synthesis of graphene on Co/SiC structure

Popis výsledku anglicky

Bi-layer graphene sheets have been prepared on the basis of a reaction of cobalt with silicon carbide at temperatures around 1,000 A degrees C. This is a type of viable low temperature graphene synthesis. Preparation of graphene was carried out with various thicknesses of the Co layer deposited onto the SiC surface and parameters of the annealing process (temperature, annealing time) were varied. Number of carbon mono-layers in the prepared graphene and its crystallinity were determined from the resultsof Raman spectroscopy. The best results have been obtained for a structure with Cobalt layer of 300 nm thickness, annealed at 1,080 A degrees C for the period of 120 s. When using shorter annealing times, significantly non-homogenous reaction of Co withSiC has been observed, forming two different phases on the surface.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

CA - Anorganická chemie

OECD FORD obor

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Projekt

<a href="/cs/project/GAP108%2F11%2F0894" target="_blank" >GAP108/11/0894: Růst a zpracování gafenových vrstev na karbidu křemíku</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2013

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS

ISSN

0957-4522

e-ISSN

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Svazek periodika

24

Číslo periodika v rámci svazku

10

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

7

Strana od-do

3793-3799

Kód UT WoS článku

000324325800027

EID výsledku v databázi Scopus

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