Threefold rotational symmetry in hexagonally shaped core-shell (In,Ga) As/GaAs nanowires revealed by coherent X-ray diffraction imaging

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F17%3A10363583" target="_blank" >RIV/00216208:11320/17:10363583 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1107/S1600576717004149" target="_blank" >http://dx.doi.org/10.1107/S1600576717004149</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1107/S1600576717004149" target="_blank" >10.1107/S1600576717004149</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Threefold rotational symmetry in hexagonally shaped core-shell (In,Ga) As/GaAs nanowires revealed by coherent X-ray diffraction imaging

Popis výsledku v původním jazyce

Coherent X-ray diffraction imaging at symmetric hhh Bragg reflections was used to resolve the structure of GaAs/In0.15Ga0.85As/GaAs core-shell-shell nanowires grown on a silicon (111) substrate. Diffraction amplitudes in the vicinity of GaAs 111 and GaAs 333 reflections were used to reconstruct the lost phase information. It is demonstrated that the structure of the core-shell-shell nanowire can be identified by means of phase contrast. Interestingly, it is found that both scattered intensity in the (111) plane and the reconstructed scattering phase show an additional threefold symmetry superimposed with the shape function of the investigated hexagonal nanowires. In order to find the origin of this threefold symmetry, elasticity calculations were performed using the finite element method and subsequent kinematic diffraction simulations. These suggest that a non-hexagonal (In, Ga) As shell covering the hexagonal GaAs core might be responsible for the observation.

Název v anglickém jazyce

Threefold rotational symmetry in hexagonally shaped core-shell (In,Ga) As/GaAs nanowires revealed by coherent X-ray diffraction imaging

Popis výsledku anglicky

Coherent X-ray diffraction imaging at symmetric hhh Bragg reflections was used to resolve the structure of GaAs/In0.15Ga0.85As/GaAs core-shell-shell nanowires grown on a silicon (111) substrate. Diffraction amplitudes in the vicinity of GaAs 111 and GaAs 333 reflections were used to reconstruct the lost phase information. It is demonstrated that the structure of the core-shell-shell nanowire can be identified by means of phase contrast. Interestingly, it is found that both scattered intensity in the (111) plane and the reconstructed scattering phase show an additional threefold symmetry superimposed with the shape function of the investigated hexagonal nanowires. In order to find the origin of this threefold symmetry, elasticity calculations were performed using the finite element method and subsequent kinematic diffraction simulations. These suggest that a non-hexagonal (In, Ga) As shell covering the hexagonal GaAs core might be responsible for the observation.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

—

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2017

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Applied Crystallography [online]

ISSN

1600-5767

e-ISSN

—

Svazek periodika

50

Číslo periodika v rámci svazku

červen

Stát vydavatele periodika

JP - Japonsko

Počet stran výsledku

8

Strana od-do

673-680

Kód UT WoS článku

000402701600002

EID výsledku v databázi Scopus

2-s2.0-85020198122