Technology and characterization of MIS structures with co-doped silicon nanocrystals (Si-NCs) embedded in hafnium oxide (HfOx) ultra-thin layers

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F17%3A10370561" target="_blank" >RIV/00216208:11320/17:10370561 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1016/j.mee.2017.05.050" target="_blank" >http://dx.doi.org/10.1016/j.mee.2017.05.050</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.mee.2017.05.050" target="_blank" >10.1016/j.mee.2017.05.050</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Technology and characterization of MIS structures with co-doped silicon nanocrystals (Si-NCs) embedded in hafnium oxide (HfOx) ultra-thin layers

Popis výsledku v původním jazyce

In this work, the technology of the metal-insulator-semiconductor (MIS) structures with co-doped silicon nanocrystals (Si-NCs) embedded in hafnium oxide (HfOx) dielectric layer is presented. The results of structural and electrical characterization of the fabricated test structures are discussed. A good agreement between measurements of thickness of the Si-NC layers for the spectroscopic ellipsometry and AFM methods was obtained. The spectroscopic analysis demonstrated a presence of Si-NCs of optical properties similar to the monocrystalline silicon. A simulation of the capacitance-voltage-time and current-voltage-time characteristics gave results of a qualitative agreement with the measurement data. Comparative stress-and-sense measurements (I-t) for the MIS structures with and without silicon nanocrystals proved the essential difference resulting from the charging/discharging processes of the nanocrystals.

Název v anglickém jazyce

Technology and characterization of MIS structures with co-doped silicon nanocrystals (Si-NCs) embedded in hafnium oxide (HfOx) ultra-thin layers

Popis výsledku anglicky

In this work, the technology of the metal-insulator-semiconductor (MIS) structures with co-doped silicon nanocrystals (Si-NCs) embedded in hafnium oxide (HfOx) dielectric layer is presented. The results of structural and electrical characterization of the fabricated test structures are discussed. A good agreement between measurements of thickness of the Si-NC layers for the spectroscopic ellipsometry and AFM methods was obtained. The spectroscopic analysis demonstrated a presence of Si-NCs of optical properties similar to the monocrystalline silicon. A simulation of the capacitance-voltage-time and current-voltage-time characteristics gave results of a qualitative agreement with the measurement data. Comparative stress-and-sense measurements (I-t) for the MIS structures with and without silicon nanocrystals proved the essential difference resulting from the charging/discharging processes of the nanocrystals.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

<a href="/cs/project/8F15001" target="_blank" >8F15001: Nanophotonics with metal – group-IV-semiconductor nanocomposites: From single nanoobjects to functional ensembles</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2017

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Microelectronic Engineering

ISSN

0167-9317

e-ISSN

—

Svazek periodika

178

Číslo periodika v rámci svazku

JUN 25 2017

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

6

Strana od-do

298-303

Kód UT WoS článku

000404703800068

EID výsledku v databázi Scopus

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