Absence of free carriers in silicon nanocrystals grown from phosphorus- and boron-doped silicon-rich oxide and oxynitride

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F18%3A10384468" target="_blank" >RIV/00216208:11320/18:10384468 - isvavai.cz</a>

Výsledek na webu

<a href="https://doi.org/10.3762/bjnano.9.141" target="_blank" >https://doi.org/10.3762/bjnano.9.141</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.3762/bjnano.9.141" target="_blank" >10.3762/bjnano.9.141</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Absence of free carriers in silicon nanocrystals grown from phosphorus- and boron-doped silicon-rich oxide and oxynitride

Popis výsledku v původním jazyce

Phosphorus- and boron-doped silicon nanocrystals (Si NCs) embedded in silicon oxide matrix can be fabricated by plasma-enhanced chemical vapour deposition (PECVD). Conventionally, SiH4 and N2O are used as precursor gasses, which inevitably leads to the incorporation of approximate to 10 atom % nitrogen, rendering the matrix a silicon oxynitride. Alternatively, SiH4 and O-2 can be used, which allows for completely N-free silicon oxide. In this work, we investigate the properties of B- and P-incorporating Si NCs embedded in pure silicon oxide compared to silicon oxynitride by atom probe tomography (APT), low-temperature photoluminescence (PL), transient transmission (TT), and current-voltage (I-V) measurements. The results clearly show that no free carriers, neither from P- nor from B-doping, exist in the Si NCs, although in some configurations charge carriers can be generated by electric field ionization. The absence of free carriers in Si NCs &lt;= 5 nm in diameter despite the presence of P- or B-atoms has severe implications for future applications of conventional impurity doping of Si in sub-10 nm technology nodes.

Název v anglickém jazyce

Absence of free carriers in silicon nanocrystals grown from phosphorus- and boron-doped silicon-rich oxide and oxynitride

Popis výsledku anglicky

Phosphorus- and boron-doped silicon nanocrystals (Si NCs) embedded in silicon oxide matrix can be fabricated by plasma-enhanced chemical vapour deposition (PECVD). Conventionally, SiH4 and N2O are used as precursor gasses, which inevitably leads to the incorporation of approximate to 10 atom % nitrogen, rendering the matrix a silicon oxynitride. Alternatively, SiH4 and O-2 can be used, which allows for completely N-free silicon oxide. In this work, we investigate the properties of B- and P-incorporating Si NCs embedded in pure silicon oxide compared to silicon oxynitride by atom probe tomography (APT), low-temperature photoluminescence (PL), transient transmission (TT), and current-voltage (I-V) measurements. The results clearly show that no free carriers, neither from P- nor from B-doping, exist in the Si NCs, although in some configurations charge carriers can be generated by electric field ionization. The absence of free carriers in Si NCs &lt;= 5 nm in diameter despite the presence of P- or B-atoms has severe implications for future applications of conventional impurity doping of Si in sub-10 nm technology nodes.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10306 - Optics (including laser optics and quantum optics)

Projekt

—

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2018

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Beilstein Journal of Nanotechnology

ISSN

2190-4286

e-ISSN

—

Svazek periodika

9

Číslo periodika v rámci svazku

18 May 2018

Stát vydavatele periodika

DE - Spolková republika Německo

Počet stran výsledku

11

Strana od-do

1501-1511

Kód UT WoS článku

000432849100002

EID výsledku v databázi Scopus

2-s2.0-85047534671