Analysis of the Sn chain length fluctuations on Si(100) 2 x 1: An extraction of microscopic parameters

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F17%3A10371707" target="_blank" >RIV/00216208:11320/17:10371707 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1103/PhysRevB.96.045430" target="_blank" >http://dx.doi.org/10.1103/PhysRevB.96.045430</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1103/PhysRevB.96.045430" target="_blank" >10.1103/PhysRevB.96.045430</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Analysis of the Sn chain length fluctuations on Si(100) 2 x 1: An extraction of microscopic parameters

Popis výsledku v původním jazyce

Tin chains grown on the Si(100) 2 x 1 surface were studied by scanning tunneling microscopy. Real time measurements were used for recording chain length fluctuations in a temperature range from 310 to 350 K. The recorded data were analyzed by means of a statistical model containing both interfering processes observed at a chain termination-random attachment and detachment of metal atoms. Rates of the both processes were calculated from lifetimes of two different chain terminations (monomer or dimer) by means of derived formulas. The activation energies for the detachment and frequency prefactors were calculated from dependence of the corresponding time constants on temperature in an Arrhenius plot. A similar approach was used for characterization of binding Sn atoms on C-type defects which represent preferential adsorption sites.

Název v anglickém jazyce

Analysis of the Sn chain length fluctuations on Si(100) 2 x 1: An extraction of microscopic parameters

Popis výsledku anglicky

Tin chains grown on the Si(100) 2 x 1 surface were studied by scanning tunneling microscopy. Real time measurements were used for recording chain length fluctuations in a temperature range from 310 to 350 K. The recorded data were analyzed by means of a statistical model containing both interfering processes observed at a chain termination-random attachment and detachment of metal atoms. Rates of the both processes were calculated from lifetimes of two different chain terminations (monomer or dimer) by means of derived formulas. The activation energies for the detachment and frequency prefactors were calculated from dependence of the corresponding time constants on temperature in an Arrhenius plot. A similar approach was used for characterization of binding Sn atoms on C-type defects which represent preferential adsorption sites.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10305 - Fluids and plasma physics (including surface physics)

Projekt

—

Návaznosti

S - Specificky vyzkum na vysokych skolach<br>I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2017

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Physical Review B

ISSN

2469-9950

e-ISSN

—

Svazek periodika

96

Číslo periodika v rámci svazku

4

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

7

Strana od-do

—

Kód UT WoS článku

000406292600011

EID výsledku v databázi Scopus

2-s2.0-85026395209