Antiferroelectricity in lanthanum doped zirconia without metallic capping layers and post-deposition/-metallization anneals
Identifikátory výsledku
Kód výsledku v IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F18%3A10380455" target="_blank" >RIV/00216208:11320/18:10380455 - isvavai.cz</a>
Výsledek na webu
<a href="https://doi.org/10.1063/1.5037185" target="_blank" >https://doi.org/10.1063/1.5037185</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1063/1.5037185" target="_blank" >10.1063/1.5037185</a>
Alternativní jazyky
Jazyk výsledku
angličtina
Název v původním jazyce
Antiferroelectricity in lanthanum doped zirconia without metallic capping layers and post-deposition/-metallization anneals
Popis výsledku v původním jazyce
We report the effects of lanthanum doping/alloying on antiferroelectric (AFE) properties of ZrO2. Starting with pure ZrO2, an increase in La doping leads to the narrowing of the AFE double hysteresis loops and an increase in the critical voltage/electric field for AFE -> ferroelectric transition. At higher La contents, the polarization-voltage characteristics of doped/alloyed ZrO2 resemble that of a nonlinear dielectric without any discernible AFE-type hysteresis. X-ray diffraction based analysis indicates that the increased La content while preserving the non-polar, parent AFE, tetragonal P4(2)/nmc phase leads to a decrease in tetragonality and the (nano-) crystallite size and an increase in the unit cell volume. Furthermore, antiferroelectric behavior is obtained in the as-deposited thin films without requiring any capping metallic layers and post-deposition/-metallization anneals due to which our specific atomic layer deposition system configuration crystallizes and stabilizes the AFE tetragonal phase during growth. Published by AIP Publishing.
Název v anglickém jazyce
Antiferroelectricity in lanthanum doped zirconia without metallic capping layers and post-deposition/-metallization anneals
Popis výsledku anglicky
We report the effects of lanthanum doping/alloying on antiferroelectric (AFE) properties of ZrO2. Starting with pure ZrO2, an increase in La doping leads to the narrowing of the AFE double hysteresis loops and an increase in the critical voltage/electric field for AFE -> ferroelectric transition. At higher La contents, the polarization-voltage characteristics of doped/alloyed ZrO2 resemble that of a nonlinear dielectric without any discernible AFE-type hysteresis. X-ray diffraction based analysis indicates that the increased La content while preserving the non-polar, parent AFE, tetragonal P4(2)/nmc phase leads to a decrease in tetragonality and the (nano-) crystallite size and an increase in the unit cell volume. Furthermore, antiferroelectric behavior is obtained in the as-deposited thin films without requiring any capping metallic layers and post-deposition/-metallization anneals due to which our specific atomic layer deposition system configuration crystallizes and stabilizes the AFE tetragonal phase during growth. Published by AIP Publishing.
Klasifikace
Druh
J<sub>imp</sub> - Článek v periodiku v databázi Web of Science
CEP obor
—
OECD FORD obor
10302 - Condensed matter physics (including formerly solid state physics, supercond.)
Návaznosti výsledku
Projekt
<a href="/cs/project/EF15_003%2F0000485" target="_blank" >EF15_003/0000485: Centrum nanomateriálů pro pokročilé aplikace</a><br>
Návaznosti
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Ostatní
Rok uplatnění
2018
Kód důvěrnosti údajů
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Údaje specifické pro druh výsledku
Název periodika
Applied Physics Letters
ISSN
0003-6951
e-ISSN
—
Svazek periodika
112
Číslo periodika v rámci svazku
22
Stát vydavatele periodika
US - Spojené státy americké
Počet stran výsledku
5
Strana od-do
—
Kód UT WoS článku
000433963500016
EID výsledku v databázi Scopus
2-s2.0-85048278332