Influence of gallium content on Ga3+ position and photo-and thermally stimulated luminescence in Ce3+-doped multicomponent (Y,Lu)(3)GaxAl(5)xO(12) garnets
Identifikátory výsledku
Kód výsledku v IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F18%3A10386441" target="_blank" >RIV/00216208:11320/18:10386441 - isvavai.cz</a>
Nalezeny alternativní kódy
RIV/68378271:_____/18:00499480
Výsledek na webu
<a href="https://doi.org/10.1016/j.jlumin.2018.04.013" target="_blank" >https://doi.org/10.1016/j.jlumin.2018.04.013</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.jlumin.2018.04.013" target="_blank" >10.1016/j.jlumin.2018.04.013</a>
Alternativní jazyky
Jazyk výsledku
angličtina
Název v původním jazyce
Influence of gallium content on Ga3+ position and photo-and thermally stimulated luminescence in Ce3+-doped multicomponent (Y,Lu)(3)GaxAl(5)xO(12) garnets
Popis výsledku v původním jazyce
Photoluminescence, thermally stimulated luminescence (TSL) and EPR characteristics of the Ce3+-doped single crystals of multicomponent Y1Lu2GaxAl5-xO12 and Lu3GaxAl5-xO12 garnets with different Ga contents (x = 0, 1, 2, 3, 4, 5) excited in the Ce3+-related absorption bands are investigated in the 9-500 K temperature range. The distribution of Ga3+ and Al3+ ions in the crystal lattice is determined by the NMR method. The relative number of Ga3+ ions in the tetrahedral crystal lattice sites, the maxima positions of the TSL glow curve peaks and the corresponding trap depths are found to decrease linearly with the increasing Ga content. At the same time, the reduction of the activation energy Ea of the TSL glow curve peaks creation under irradiation in the 4f-5d1 absorption band of Ce3+ is strongly nonlinear. To explain this effect, the suggestion is made that Ea is the energy distance between the excited 5d1 level of Ce3+ and a defect level located between the 5d1 level and the bottom of the conduction band and arising from the Ga3+ ion perturbed by the nearest neighboring Ce3+ ion. The elec- trons thermally released from the excited Ce3+ ions are suggested to be trapped at the perturbed Ga3+ ions resulting in the appearance of electron Ga2+ centers. In spite of the fact that the paramagnetic Ga2+ ions were not detected by EPR, the process described above has been found for Fe3+ impurity ions, namely, the electron transfer from the 5d1 excited level of Ce3+ to Fe3+ is directly detected by EPR.
Název v anglickém jazyce
Influence of gallium content on Ga3+ position and photo-and thermally stimulated luminescence in Ce3+-doped multicomponent (Y,Lu)(3)GaxAl(5)xO(12) garnets
Popis výsledku anglicky
Photoluminescence, thermally stimulated luminescence (TSL) and EPR characteristics of the Ce3+-doped single crystals of multicomponent Y1Lu2GaxAl5-xO12 and Lu3GaxAl5-xO12 garnets with different Ga contents (x = 0, 1, 2, 3, 4, 5) excited in the Ce3+-related absorption bands are investigated in the 9-500 K temperature range. The distribution of Ga3+ and Al3+ ions in the crystal lattice is determined by the NMR method. The relative number of Ga3+ ions in the tetrahedral crystal lattice sites, the maxima positions of the TSL glow curve peaks and the corresponding trap depths are found to decrease linearly with the increasing Ga content. At the same time, the reduction of the activation energy Ea of the TSL glow curve peaks creation under irradiation in the 4f-5d1 absorption band of Ce3+ is strongly nonlinear. To explain this effect, the suggestion is made that Ea is the energy distance between the excited 5d1 level of Ce3+ and a defect level located between the 5d1 level and the bottom of the conduction band and arising from the Ga3+ ion perturbed by the nearest neighboring Ce3+ ion. The elec- trons thermally released from the excited Ce3+ ions are suggested to be trapped at the perturbed Ga3+ ions resulting in the appearance of electron Ga2+ centers. In spite of the fact that the paramagnetic Ga2+ ions were not detected by EPR, the process described above has been found for Fe3+ impurity ions, namely, the electron transfer from the 5d1 excited level of Ce3+ to Fe3+ is directly detected by EPR.
Klasifikace
Druh
J<sub>imp</sub> - Článek v periodiku v databázi Web of Science
CEP obor
—
OECD FORD obor
10302 - Condensed matter physics (including formerly solid state physics, supercond.)
Návaznosti výsledku
Projekt
<a href="/cs/project/GA17-09933S" target="_blank" >GA17-09933S: Lokální struktura a procesy zachycování nábojů v nových scintilačních materiálech s uzpůsobeným složením</a><br>
Návaznosti
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Ostatní
Rok uplatnění
2018
Kód důvěrnosti údajů
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Údaje specifické pro druh výsledku
Název periodika
Journal of Luminescence
ISSN
0022-2313
e-ISSN
—
Svazek periodika
200
Číslo periodika v rámci svazku
APR
Stát vydavatele periodika
NL - Nizozemsko
Počet stran výsledku
10
Strana od-do
141-150
Kód UT WoS článku
000432857700021
EID výsledku v databázi Scopus
2-s2.0-85045541239