Hydrogen intercalation of epitaxial graphene and buffer layer probed by mid-infrared absorption and Raman spectroscopy

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F18%3A10387105" target="_blank" >RIV/00216208:11320/18:10387105 - isvavai.cz</a>

Výsledek na webu

<a href="https://doi.org/10.1063/1.5024132" target="_blank" >https://doi.org/10.1063/1.5024132</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1063/1.5024132" target="_blank" >10.1063/1.5024132</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Hydrogen intercalation of epitaxial graphene and buffer layer probed by mid-infrared absorption and Raman spectroscopy

Popis výsledku v původním jazyce

We have measured optical absorption in mid-infrared spectral range on hydrogen intercalated single layer epitaxial graphene and buffer layer grown on silicon face of SiC. We have used attenuated total reflection geometry to enhance absorption related to the surface and SiC/graphene interface. The Raman spectroscopy is used to show presence of buffer layer and single layer graphene prior to intercalation. We also present Raman spectra of quasi free standing monolayer and bilayer graphene after hydrogen intercalation at temperatures between 790 and 1510 degrees C. We have found that although the Si-H bonds form at as low temperatures as 790 degrees C, the well developed bond order has been reached only for samples intercalated at temperatures exceeding 1000 degrees C. We also study temporal stability of hydrogen intercalated samples stored in ambient air. The optical spectroscopy shows on a formation of silyl and silylene groups on the SiC/graphene interface due to the residual atomic hydrogen left from the intercalation process. (C) 2018 Author (s).

Název v anglickém jazyce

Hydrogen intercalation of epitaxial graphene and buffer layer probed by mid-infrared absorption and Raman spectroscopy

Popis výsledku anglicky

We have measured optical absorption in mid-infrared spectral range on hydrogen intercalated single layer epitaxial graphene and buffer layer grown on silicon face of SiC. We have used attenuated total reflection geometry to enhance absorption related to the surface and SiC/graphene interface. The Raman spectroscopy is used to show presence of buffer layer and single layer graphene prior to intercalation. We also present Raman spectra of quasi free standing monolayer and bilayer graphene after hydrogen intercalation at temperatures between 790 and 1510 degrees C. We have found that although the Si-H bonds form at as low temperatures as 790 degrees C, the well developed bond order has been reached only for samples intercalated at temperatures exceeding 1000 degrees C. We also study temporal stability of hydrogen intercalated samples stored in ambient air. The optical spectroscopy shows on a formation of silyl and silylene groups on the SiC/graphene interface due to the residual atomic hydrogen left from the intercalation process. (C) 2018 Author (s).

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2018

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

AIP Advances

ISSN

2158-3226

e-ISSN

—

Svazek periodika

8

Číslo periodika v rámci svazku

4

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

10

Strana od-do

—

Kód UT WoS článku

000435454600053

EID výsledku v databázi Scopus

2-s2.0-85045540732