ZO phonon of a buffer layer and Raman mapping of hydrogenated buffer on SiC(0001)

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F19%3A10388857" target="_blank" >RIV/00216208:11320/19:10388857 - isvavai.cz</a>

Výsledek na webu

<a href="https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=.VklyQq~0T" target="_blank" >https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=.VklyQq~0T</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1002/jrs.5533" target="_blank" >10.1002/jrs.5533</a>

Jazyk výsledku

angličtina

Název v původním jazyce

ZO phonon of a buffer layer and Raman mapping of hydrogenated buffer on SiC(0001)

Popis výsledku v původním jazyce

We have measured spatial Raman maps of hydrogen intercalated quasi-free standing monolayer graphene (QFSMLG) on SiC(0001). We compare Raman spectra of QFSMLG with spectra of bare buffer layer, single-layer graphene, and bare SiC substrate.We also present the evolution of QFSMLG Raman spectra with the temperature and duration of hydrogen intercalation. We present new Raman modes, and, on the basis of polarization resolved measurements, we attribute them to the totally symmetric out-of-plane optical phonon (ZO) modes of the buffer layer at the Γ and M points. We show that these modes are eliminated by hydrogen intercalation; thus, they indicate onset of buffer layer decoupling from the SiC substrate. The spatial mapping of Raman scattering reveals details of the optimal hydrogen intercalation at elevated temperatures. Further increase of the intercalation temperature leads to etching of the buffer layer and underlying SiC substrate. Therefore, we show that interplay between temperature and intercalation time is a promising route towards increased graphene grain size with reduced lattice strain.

Název v anglickém jazyce

ZO phonon of a buffer layer and Raman mapping of hydrogenated buffer on SiC(0001)

Popis výsledku anglicky

We have measured spatial Raman maps of hydrogen intercalated quasi-free standing monolayer graphene (QFSMLG) on SiC(0001). We compare Raman spectra of QFSMLG with spectra of bare buffer layer, single-layer graphene, and bare SiC substrate.We also present the evolution of QFSMLG Raman spectra with the temperature and duration of hydrogen intercalation. We present new Raman modes, and, on the basis of polarization resolved measurements, we attribute them to the totally symmetric out-of-plane optical phonon (ZO) modes of the buffer layer at the Γ and M points. We show that these modes are eliminated by hydrogen intercalation; thus, they indicate onset of buffer layer decoupling from the SiC substrate. The spatial mapping of Raman scattering reveals details of the optimal hydrogen intercalation at elevated temperatures. Further increase of the intercalation temperature leads to etching of the buffer layer and underlying SiC substrate. Therefore, we show that interplay between temperature and intercalation time is a promising route towards increased graphene grain size with reduced lattice strain.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

<a href="/cs/project/GJ16-15763Y" target="_blank" >GJ16-15763Y: Laditelné elektronické a optoelektronické součástky na bázi epitaxního grafénu na SiC</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2019

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Raman Spectroscopy

ISSN

0377-0486

e-ISSN

—

Svazek periodika

50

Číslo periodika v rámci svazku

3

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

9

Strana od-do

465-473

Kód UT WoS článku

000461884300017

EID výsledku v databázi Scopus

2-s2.0-85058998622