Pathways of carrier recombination in Si/SiO2 nanocrystal superlattices

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F19%3A10403021" target="_blank" >RIV/00216208:11320/19:10403021 - isvavai.cz</a>

Výsledek na webu

<a href="https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=fpeRNj0ZX3" target="_blank" >https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=fpeRNj0ZX3</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1063/1.5116778" target="_blank" >10.1063/1.5116778</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Pathways of carrier recombination in Si/SiO2 nanocrystal superlattices

Popis výsledku v původním jazyce

We investigated picosecond carrier recombination in Si/SiO2 nanocrystal superlattices by ultrafast transient transmission, time-resolved photoluminescence, and Raman spectroscopy. The recombination is of multicarrier origin and it depends strongly on the nanoscale structure of the samples (e.g., crystallinity, percolation, and size distribution). Several recombination pathways were found, including Auger recombination, trapped-carrier Auger recombination, exciton-exciton recombination, and subsequent trapping in band tail states of amorphous silicon phase. The sample microscopic structure is determined using a single parameter, the stoichiometric parameter x, during the plasma-enhanced chemical-vapor deposition process. The percolated samples are hot candidates for all-silicon tandem photovoltaic solar cells in the future. Published under license by AIP Publishing.

Název v anglickém jazyce

Pathways of carrier recombination in Si/SiO2 nanocrystal superlattices

Popis výsledku anglicky

We investigated picosecond carrier recombination in Si/SiO2 nanocrystal superlattices by ultrafast transient transmission, time-resolved photoluminescence, and Raman spectroscopy. The recombination is of multicarrier origin and it depends strongly on the nanoscale structure of the samples (e.g., crystallinity, percolation, and size distribution). Several recombination pathways were found, including Auger recombination, trapped-carrier Auger recombination, exciton-exciton recombination, and subsequent trapping in band tail states of amorphous silicon phase. The sample microscopic structure is determined using a single parameter, the stoichiometric parameter x, during the plasma-enhanced chemical-vapor deposition process. The percolated samples are hot candidates for all-silicon tandem photovoltaic solar cells in the future. Published under license by AIP Publishing.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10306 - Optics (including laser optics and quantum optics)

Projekt

—

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2019

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Applied Physics

ISSN

0021-8979

e-ISSN

—

Svazek periodika

126

Číslo periodika v rámci svazku

16

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

9

Strana od-do

163101

Kód UT WoS článku

000504001300001

EID výsledku v databázi Scopus

2-s2.0-85074225206