Nanostructuring of PMMA, GaAs, SiC and Si samples by focused XUV laser beam

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F19%3A10403929" target="_blank" >RIV/00216208:11320/19:10403929 - isvavai.cz</a>

Výsledek na webu

<a href="https://doi.org/10.1117/12.2521444" target="_blank" >https://doi.org/10.1117/12.2521444</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1117/12.2521444" target="_blank" >10.1117/12.2521444</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Nanostructuring of PMMA, GaAs, SiC and Si samples by focused XUV laser beam

Popis výsledku v původním jazyce

We report results of ablation experiments of different materials through Ni grid with an intense XUV laser beam. As a source of XUV radiation (energy of about 100 mu J) with wavelength of 46.9 nm was used high-current capillary discharge driver. Ablated footprints were analyzed by optical microscope and by an atomic-force microscope (AFM). It was found that structure and period of diffraction pattern on PMMA sample (both in ablation and desorption area) depend on the distance from grid to the sample surface. Depth of ablation craters in a single window of PMMA for single shot was about of 80 nm, and period changes from 400 nm (on the edge) to 190 nm (in the middle) for grid further from surface, and from 400 nm (on the edge) to 10 nm (in the middle) for closer grid. Contrary to this, no diffraction patterns in ablation region and only slightly visible on the edge in the desorption region were observed on the surface of GaAs, SiC and Si samples for single shot. Depth of ablated craters in ablation region was about 100 nm for GaAs, 20 nm for Si and up to 5 nm for SiC. In desorption region depth of ablated craters is relatively shallow (up to 5 nm for GaAs and up to 2 nm for Si and SiC). In the case of irradiation samples by 5 shots ablated craters are deeper, but situation with diffraction pattern is the same as in the case of single shot for all materials.

Název v anglickém jazyce

Nanostructuring of PMMA, GaAs, SiC and Si samples by focused XUV laser beam

Popis výsledku anglicky

We report results of ablation experiments of different materials through Ni grid with an intense XUV laser beam. As a source of XUV radiation (energy of about 100 mu J) with wavelength of 46.9 nm was used high-current capillary discharge driver. Ablated footprints were analyzed by optical microscope and by an atomic-force microscope (AFM). It was found that structure and period of diffraction pattern on PMMA sample (both in ablation and desorption area) depend on the distance from grid to the sample surface. Depth of ablation craters in a single window of PMMA for single shot was about of 80 nm, and period changes from 400 nm (on the edge) to 190 nm (in the middle) for grid further from surface, and from 400 nm (on the edge) to 10 nm (in the middle) for closer grid. Contrary to this, no diffraction patterns in ablation region and only slightly visible on the edge in the desorption region were observed on the surface of GaAs, SiC and Si samples for single shot. Depth of ablated craters in ablation region was about 100 nm for GaAs, 20 nm for Si and up to 5 nm for SiC. In desorption region depth of ablated craters is relatively shallow (up to 5 nm for GaAs and up to 2 nm for Si and SiC). In the case of irradiation samples by 5 shots ablated craters are deeper, but situation with diffraction pattern is the same as in the case of single shot for all materials.

Druh

D - Stať ve sborníku

CEP obor

—

OECD FORD obor

10305 - Fluids and plasma physics (including surface physics)

Projekt

—

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2019

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

OPTICS DAMAGE AND MATERIALS PROCESSING BY EUV/X-RAY RADIATION VII

ISBN

978-1-5106-2737-6

ISSN

0277-786X

e-ISSN

1996-756X

Počet stran výsledku

6

Strana od-do

—

Název nakladatele

SPIE-INT SOC OPTICAL ENGINEERING

Místo vydání

BELLINGHAM

Místo konání akce

Prague

Datum konání akce

1. 4. 2019

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

000489750600006