Space-Charge-Limited Photocurrents and Transient Currents in (Cd, Zn)Te Radiation Detectors

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F20%3A10417391" target="_blank" >RIV/00216208:11320/20:10417391 - isvavai.cz</a>

Výsledek na webu

<a href="https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=2b72HLxdTp" target="_blank" >https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=2b72HLxdTp</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1103/PhysRevApplied.13.064054" target="_blank" >10.1103/PhysRevApplied.13.064054</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Space-Charge-Limited Photocurrents and Transient Currents in (Cd, Zn)Te Radiation Detectors

Popis výsledku v původním jazyce

We combine steady-state photoconductivity and laser-induced transient current measurements under above-band-gap illumination to study space-charge formation in (Cd, Zn)Te. Analytical and numerical models describing space-charge-limited photocurrents are developed and excellent agreement with measured data is obtained, especially with the Drift-diffusion model. A linear rise of photocurrent at low voltage is observed and ascribed to the trapping of injected holes in the region close to the cathode side. The influence of space-charge formation, the influence of photoconductive gain, and the contribution of shallow and deep levels to photocurrent-voltage characteristics are numerically simulated. According to measurements and calculations, recent principles used to evaluate detector properties, mainly the mobility-lifetime product, via the photoconductivity are critically assessed.

Název v anglickém jazyce

Space-Charge-Limited Photocurrents and Transient Currents in (Cd, Zn)Te Radiation Detectors

Popis výsledku anglicky

We combine steady-state photoconductivity and laser-induced transient current measurements under above-band-gap illumination to study space-charge formation in (Cd, Zn)Te. Analytical and numerical models describing space-charge-limited photocurrents are developed and excellent agreement with measured data is obtained, especially with the Drift-diffusion model. A linear rise of photocurrent at low voltage is observed and ascribed to the trapping of injected holes in the region close to the cathode side. The influence of space-charge formation, the influence of photoconductive gain, and the contribution of shallow and deep levels to photocurrent-voltage characteristics are numerically simulated. According to measurements and calculations, recent principles used to evaluate detector properties, mainly the mobility-lifetime product, via the photoconductivity are critically assessed.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

<a href="/cs/project/GA18-12449S" target="_blank" >GA18-12449S: Transport náboje v SiC detektorech záření.</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2020

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Physical Review Applied

ISSN

2331-7019

e-ISSN

—

Svazek periodika

13

Číslo periodika v rámci svazku

6

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

15

Strana od-do

064054

Kód UT WoS článku

000541707800004

EID výsledku v databázi Scopus

2-s2.0-85087587172