Charge Transport and Space-Charge Formation in Cd(1-x)Zn(x)Te(1-y)Se(y) Radiation Detectors

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F21%3A10431983" target="_blank" >RIV/00216208:11320/21:10431983 - isvavai.cz</a>

Výsledek na webu

<a href="https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=dKXHHpF4dx" target="_blank" >https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=dKXHHpF4dx</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1103/PhysRevApplied.15.054058" target="_blank" >10.1103/PhysRevApplied.15.054058</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Charge Transport and Space-Charge Formation in Cd(1-x)Zn(x)Te(1-y)Se(y) Radiation Detectors

Popis výsledku v původním jazyce

The electron- and hole-transport properties in cadmium zinc telluride selenide (CZTS) crystals are studied using a laser-induced transient-current technique with pulsed and dc bias. The internal electric field profile and velocity of surface recombination are determined by Monte Carlo simulations of electron and hole transient currents combined with a numerical solution of the drift-diffusion equation coupled with Poisson&apos;s equation. Electron and hole drift mobilities of mu(e) = 830 cm^2/Vs and mu(h) = 40 cm^2/Vs, respectively, are determined. We also develop a simple technique for evaluating surface recombination directly from measured current waveforms without the need for numerical simulation. The good quality of the prepared detector at pulsed bias, with electron- and hole-mobility-lifetime products of (mu t )(e) = 1.9 x 10^-3 cm^2/V and (mu t )(h) = 1.4 x 10-4 cm^2/V, respectively, are observed. The formation of a positive space charge, originating from hole injection combined with a recombination level, is found. We observe a significant position dependence of the lifetime of electrons and holes in dc bias due to hole injection. The experiment is successfully fitted by a simple model dominated by a single deep recombination level with an energy of Et = EC - 0.73 eV; concentration of 7.3 x 10^11 cm^-3; and electron- and hole-capture cross sections of 3.5 x 10^-14 cm^2 and 6.5 x 10^-14 cm^2, respectively.

Název v anglickém jazyce

Charge Transport and Space-Charge Formation in Cd(1-x)Zn(x)Te(1-y)Se(y) Radiation Detectors

Popis výsledku anglicky

The electron- and hole-transport properties in cadmium zinc telluride selenide (CZTS) crystals are studied using a laser-induced transient-current technique with pulsed and dc bias. The internal electric field profile and velocity of surface recombination are determined by Monte Carlo simulations of electron and hole transient currents combined with a numerical solution of the drift-diffusion equation coupled with Poisson&apos;s equation. Electron and hole drift mobilities of mu(e) = 830 cm^2/Vs and mu(h) = 40 cm^2/Vs, respectively, are determined. We also develop a simple technique for evaluating surface recombination directly from measured current waveforms without the need for numerical simulation. The good quality of the prepared detector at pulsed bias, with electron- and hole-mobility-lifetime products of (mu t )(e) = 1.9 x 10^-3 cm^2/V and (mu t )(h) = 1.4 x 10-4 cm^2/V, respectively, are observed. The formation of a positive space charge, originating from hole injection combined with a recombination level, is found. We observe a significant position dependence of the lifetime of electrons and holes in dc bias due to hole injection. The experiment is successfully fitted by a simple model dominated by a single deep recombination level with an energy of Et = EC - 0.73 eV; concentration of 7.3 x 10^11 cm^-3; and electron- and hole-capture cross sections of 3.5 x 10^-14 cm^2 and 6.5 x 10^-14 cm^2, respectively.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10306 - Optics (including laser optics and quantum optics)

Projekt

<a href="/cs/project/GA18-12449S" target="_blank" >GA18-12449S: Transport náboje v SiC detektorech záření.</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2021

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Physical Review Applied

ISSN

2331-7019

e-ISSN

—

Svazek periodika

15

Číslo periodika v rámci svazku

5

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

8

Strana od-do

054058

Kód UT WoS článku

000657702500003

EID výsledku v databázi Scopus

2-s2.0-85107076829