Investigation of deep levels in semi-insulating vanadium-doped 4H-SiC by photocurrent spectroscopy

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F21%3A10434312" target="_blank" >RIV/00216208:11320/21:10434312 - isvavai.cz</a>

Výsledek na webu

<a href="https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=8.QO3wiOeB" target="_blank" >https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=8.QO3wiOeB</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.physleta.2021.127433" target="_blank" >10.1016/j.physleta.2021.127433</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Investigation of deep levels in semi-insulating vanadium-doped 4H-SiC by photocurrent spectroscopy

Popis výsledku v původním jazyce

We measured spectral-resolved photocurrent in a wide range of photon energies from 0.68eV to 4.10eV, current-voltage characteristics, and mid to near-infrared transmittance spectra on a semi-insulating 4H-SiC wafer at room temperature. We identified four deep levels, their energies, and localization radii. The model considers the defects&apos; wavefunction as a linear combination of s- and p-states. Such a linear combination leads to the mixture of dipole allowed and forbidden transitions. The forbidden transitions contribute to a broad photocurrent spectrum, and the allowed transitions appear as sharp photocurrent peaks. The width of photocurrent peaks is related to the localization radius of deep levels. (C) 2021 Elsevier B.V. All rights reserved.

Název v anglickém jazyce

Investigation of deep levels in semi-insulating vanadium-doped 4H-SiC by photocurrent spectroscopy

Popis výsledku anglicky

We measured spectral-resolved photocurrent in a wide range of photon energies from 0.68eV to 4.10eV, current-voltage characteristics, and mid to near-infrared transmittance spectra on a semi-insulating 4H-SiC wafer at room temperature. We identified four deep levels, their energies, and localization radii. The model considers the defects&apos; wavefunction as a linear combination of s- and p-states. Such a linear combination leads to the mixture of dipole allowed and forbidden transitions. The forbidden transitions contribute to a broad photocurrent spectrum, and the allowed transitions appear as sharp photocurrent peaks. The width of photocurrent peaks is related to the localization radius of deep levels. (C) 2021 Elsevier B.V. All rights reserved.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

<a href="/cs/project/GA18-12449S" target="_blank" >GA18-12449S: Transport náboje v SiC detektorech záření.</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2021

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Physics Letters, Section A: General, Atomic and Solid State Physics

ISSN

0375-9601

e-ISSN

—

Svazek periodika

405

Číslo periodika v rámci svazku

Neuveden

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

7

Strana od-do

127433

Kód UT WoS článku

000653676400001

EID výsledku v databázi Scopus

2-s2.0-85106537423