Space charge formation in the high purity semi-insulating bulk 4H-silicon carbide

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F22%3A10446672" target="_blank" >RIV/00216208:11320/22:10446672 - isvavai.cz</a>

Výsledek na webu

<a href="https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=Tje_wNha.M" target="_blank" >https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=Tje_wNha.M</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.jallcom.2022.164078" target="_blank" >10.1016/j.jallcom.2022.164078</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Space charge formation in the high purity semi-insulating bulk 4H-silicon carbide

Popis výsledku v původním jazyce

We investigated the carrier transport and space charge formation in the high purity semi-insulating 4H-SiC bulk single crystal. Using the Laser-induced Transient Current Technique we observed anomalous short current waveform oscillations that are caused by very short carrier lifetime &lt;= 1 ns. We conclude from a detailed inspection of current waveform shape completed by the analysis of collected charge that the electron mobility decreases in an increasing electric field. The saturation value of electron drift velocity 8.7 x 106^6 cm(2)s(-1) was evaluated. The Hall effect measurement revealed the n-type electrical conductivity and dominant donor energy of E-D = 0.85 eV. We also observed the blocking character of prepared Au contacts, which induce the electron depletion and positive space charge formation in biased sample. The continuous increase of the space charge in a wide time interval of 10(-1) s-10(4) s, attested to testified on a presence of a dispersed impurity band localized below the Fermi energy. Based on these findings, we proposed a theoretical model describing the observed phenomena very well.

Název v anglickém jazyce

Space charge formation in the high purity semi-insulating bulk 4H-silicon carbide

Popis výsledku anglicky

We investigated the carrier transport and space charge formation in the high purity semi-insulating 4H-SiC bulk single crystal. Using the Laser-induced Transient Current Technique we observed anomalous short current waveform oscillations that are caused by very short carrier lifetime &lt;= 1 ns. We conclude from a detailed inspection of current waveform shape completed by the analysis of collected charge that the electron mobility decreases in an increasing electric field. The saturation value of electron drift velocity 8.7 x 106^6 cm(2)s(-1) was evaluated. The Hall effect measurement revealed the n-type electrical conductivity and dominant donor energy of E-D = 0.85 eV. We also observed the blocking character of prepared Au contacts, which induce the electron depletion and positive space charge formation in biased sample. The continuous increase of the space charge in a wide time interval of 10(-1) s-10(4) s, attested to testified on a presence of a dispersed impurity band localized below the Fermi energy. Based on these findings, we proposed a theoretical model describing the observed phenomena very well.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

<a href="/cs/project/GA18-12449S" target="_blank" >GA18-12449S: Transport náboje v SiC detektorech záření.</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2022

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Alloys and Compounds

ISSN

0925-8388

e-ISSN

1873-4669

Svazek periodika

904

Číslo periodika v rámci svazku

25 May

Stát vydavatele periodika

CH - Švýcarská konfederace

Počet stran výsledku

9

Strana od-do

164078

Kód UT WoS článku

000779723300001

EID výsledku v databázi Scopus

2-s2.0-85124195832