The influence of surface roughness on the presence of polymorphs and defect states in P3HT layers

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F22%3A10454517" target="_blank" >RIV/00216208:11320/22:10454517 - isvavai.cz</a>

Výsledek na webu

<a href="https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=_l9pPmkwqJ" target="_blank" >https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=_l9pPmkwqJ</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.apsusc.2021.151539" target="_blank" >10.1016/j.apsusc.2021.151539</a>

Jazyk výsledku

angličtina

Název v původním jazyce

The influence of surface roughness on the presence of polymorphs and defect states in P3HT layers

Popis výsledku v původním jazyce

Despite extensive studies on the archetypal poly(3-hexylthiophene-2,5-diyl) (P3HT) over the past decade, a concurrent investigation of the surface roughness influence on polymorphism, density of states (DOS), photoluminescence (PL), and hole mobility is missing. We report on the effect of substrate roughness on the optical and electrical properties of P3HT thin films deposited on smooth c-Si (roughness &lt; 1 nm) and rough ITO (roughness similar to 6 nm) substrates. Grazing-incidence wide-angle X-ray scattering and the energy-resolved electrochemical impedance spectroscopy were used to correlate the two polymorphs with the defect DOS in P3HT thin film grown on ITO substrate. The Jablonski diagram reconstructed from PL spectra elucidates the PL bleaching associated with sub-bandgap defect states above the highest occupied molecular orbital found in the case of the rough ITO substrate. A decrease in the PL intensity of the 0-1 transition caused by this extra band of defect states is presumably due to a non-radiative transition from the excited to the ground state or reduction of transition probability. The observed sub-band gap states have no effect on hole mobility. However, the continuum of gap states, which increases with decreasing layer thickness on both substrates, lowers the hole mobility by one order.

Název v anglickém jazyce

The influence of surface roughness on the presence of polymorphs and defect states in P3HT layers

Popis výsledku anglicky

Despite extensive studies on the archetypal poly(3-hexylthiophene-2,5-diyl) (P3HT) over the past decade, a concurrent investigation of the surface roughness influence on polymorphism, density of states (DOS), photoluminescence (PL), and hole mobility is missing. We report on the effect of substrate roughness on the optical and electrical properties of P3HT thin films deposited on smooth c-Si (roughness &lt; 1 nm) and rough ITO (roughness similar to 6 nm) substrates. Grazing-incidence wide-angle X-ray scattering and the energy-resolved electrochemical impedance spectroscopy were used to correlate the two polymorphs with the defect DOS in P3HT thin film grown on ITO substrate. The Jablonski diagram reconstructed from PL spectra elucidates the PL bleaching associated with sub-bandgap defect states above the highest occupied molecular orbital found in the case of the rough ITO substrate. A decrease in the PL intensity of the 0-1 transition caused by this extra band of defect states is presumably due to a non-radiative transition from the excited to the ground state or reduction of transition probability. The observed sub-band gap states have no effect on hole mobility. However, the continuum of gap states, which increases with decreasing layer thickness on both substrates, lowers the hole mobility by one order.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

—

Návaznosti

S - Specificky vyzkum na vysokych skolach<br>I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2022

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Applied Surface Science

ISSN

0169-4332

e-ISSN

1873-5584

Svazek periodika

573

Číslo periodika v rámci svazku

leden

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

7

Strana od-do

151539

Kód UT WoS článku

000724787700002

EID výsledku v databázi Scopus

2-s2.0-85117566755