Exciton spectrum in atomically thin monolayers: The role of hBN encapsulation

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F23%3A10468813" target="_blank" >RIV/00216208:11320/23:10468813 - isvavai.cz</a>

Výsledek na webu

<a href="https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=z9o4Q0DOmg" target="_blank" >https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=z9o4Q0DOmg</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1103/PhysRevB.108.035427" target="_blank" >10.1103/PhysRevB.108.035427</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Exciton spectrum in atomically thin monolayers: The role of hBN encapsulation

Popis výsledku v původním jazyce

The high-quality structures containing semiconducting transition-metal dichalcogenide (S-TMD) monolayers (MLs) required for optical and electrical studies are achieved by their encapsulation in hexagonal BN (hBN) flakes. To examine the effect of hBN thickness in these systems, we consider a model with an S-TMD ML placed between a semi-infinite in the out-of-plane direction substrate and complex top cover layers: a layer of finite thickness, adjacent to the ML, and a semi-infinite in the out-of-plane direction top part. We obtain the expression for the Coulomb potential for such a structure. Using this result, we demonstrate that the energies of excitonic s states in the structure with a WSe2 ML change significantly for the top hBN with thickness less than 30 layers for different substrate cases, such as hBN and SiO2. For the larger thickness of the top hBN flake, the binding energies of the excitons are saturated to their values of the bulk hBN limit.

Název v anglickém jazyce

Exciton spectrum in atomically thin monolayers: The role of hBN encapsulation

Popis výsledku anglicky

The high-quality structures containing semiconducting transition-metal dichalcogenide (S-TMD) monolayers (MLs) required for optical and electrical studies are achieved by their encapsulation in hexagonal BN (hBN) flakes. To examine the effect of hBN thickness in these systems, we consider a model with an S-TMD ML placed between a semi-infinite in the out-of-plane direction substrate and complex top cover layers: a layer of finite thickness, adjacent to the ML, and a semi-infinite in the out-of-plane direction top part. We obtain the expression for the Coulomb potential for such a structure. Using this result, we demonstrate that the energies of excitonic s states in the structure with a WSe2 ML change significantly for the top hBN with thickness less than 30 layers for different substrate cases, such as hBN and SiO2. For the larger thickness of the top hBN flake, the binding energies of the excitons are saturated to their values of the bulk hBN limit.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

<a href="/cs/project/GA23-06369S" target="_blank" >GA23-06369S: Role dekoherence v nelineárních optických interakcích vysokého řádu</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2023

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Physical Review B

ISSN

2469-9950

e-ISSN

2469-9969

Svazek periodika

108

Číslo periodika v rámci svazku

3

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

7

Strana od-do

1-7

Kód UT WoS článku

001103168700009

EID výsledku v databázi Scopus

2-s2.0-85166933098