Investigation of internal electric fields in graphene/6H-SiC under illumination by the Pockels effect

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F23%3A10473298" target="_blank" >RIV/00216208:11320/23:10473298 - isvavai.cz</a>

Výsledek na webu

<a href="https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=ZhBqy~U2nu" target="_blank" >https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=ZhBqy~U2nu</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1364/OE.502197" target="_blank" >10.1364/OE.502197</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Investigation of internal electric fields in graphene/6H-SiC under illumination by the Pockels effect

Popis výsledku v původním jazyce

In this paper, we introduce a method for mapping profiles of internal electric fields in birefringent crystals based on the electro-optic Pockels effect and measuring phase differences of low-intensity polarized light. In the case of the studied 6H-SiC crystal with graphene electrodes, the experiment is significantly affected by birefringence at zero bias voltage applied to the crystal and a strong thermo-optical effect. We dealt with these phenomena by adding a Soleil-Babinet compensator and using considerations based on measurements of crystal heating under laser illumination. The method can be generalized and adapted to any Pockels crystal that can withstand sufficiently high voltages. We demonstrate the significant formation of space charge in semi-insulating 6H-SiC under illumination by above-bandgap light.

Název v anglickém jazyce

Investigation of internal electric fields in graphene/6H-SiC under illumination by the Pockels effect

Popis výsledku anglicky

In this paper, we introduce a method for mapping profiles of internal electric fields in birefringent crystals based on the electro-optic Pockels effect and measuring phase differences of low-intensity polarized light. In the case of the studied 6H-SiC crystal with graphene electrodes, the experiment is significantly affected by birefringence at zero bias voltage applied to the crystal and a strong thermo-optical effect. We dealt with these phenomena by adding a Soleil-Babinet compensator and using considerations based on measurements of crystal heating under laser illumination. The method can be generalized and adapted to any Pockels crystal that can withstand sufficiently high voltages. We demonstrate the significant formation of space charge in semi-insulating 6H-SiC under illumination by above-bandgap light.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

<a href="/cs/project/GA22-20020S" target="_blank" >GA22-20020S: Vývoj tranzistoru na epitaxním grafenu s využitím optického dopování</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2023

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Optics Express

ISSN

1094-4087

e-ISSN

1094-4087

Svazek periodika

31

Číslo periodika v rámci svazku

21

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

20

Strana od-do

34123-34142

Kód UT WoS článku

001408451000001

EID výsledku v databázi Scopus

2-s2.0-85174798954