Polarization-Resolved Position-Sensitive Self-Powered Binary Photodetection in Multilayer Janus CrSBr
Identifikátory výsledku
Kód výsledku v IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F23%3A10474202" target="_blank" >RIV/00216208:11320/23:10474202 - isvavai.cz</a>
Nalezeny alternativní kódy
RIV/61388955:_____/24:00581747
Výsledek na webu
<a href="https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=qPy1n4HlbW" target="_blank" >https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=qPy1n4HlbW</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1021/acsami.3c13552" target="_blank" >10.1021/acsami.3c13552</a>
Alternativní jazyky
Jazyk výsledku
angličtina
Název v původním jazyce
Polarization-Resolved Position-Sensitive Self-Powered Binary Photodetection in Multilayer Janus CrSBr
Popis výsledku v původním jazyce
Recent progress in polarization-resolved photodetection based on low-symmetry 2D materials has formed the basis of cutting-edge optoelectronic devices, including quantum optical communication, 3D image processing, and sensing applications. Here, we report an optical polarization-resolving photodetector (PD) fabricated from multilayer semiconducting CrSBr single crystals with high structural anisotropy. We have demonstrated self-powered photodetection due to the formation of Schottky junctions at the Au-CrSBr interfaces, which also caused the photocurrent to display a position-sensitive and binary nature. The self-biased CrSBr PD showed a photoresponsivity of similar to 0.26 mA/W with a detectivity of 3.4 x 10(8 )Jones at 514 nm excitation of fluency (0.42 mW/cm(2)) under ambient conditions. The optical polarization-induced photoresponse exhibits a large dichroic ratio of 3.4, while the polarization is set along the a- and the b-axes of single-crystalline CrSBr. The PD also showed excellent stability, retaining >95% of the initial photoresponsivity in ambient conditions for more than five months without encapsulation. Thus, we demonstrate CrSBr as a fascinating material for ultralow-powered optical polarization-resolving optoelectronic devices for cutting-edge technology.
Název v anglickém jazyce
Polarization-Resolved Position-Sensitive Self-Powered Binary Photodetection in Multilayer Janus CrSBr
Popis výsledku anglicky
Recent progress in polarization-resolved photodetection based on low-symmetry 2D materials has formed the basis of cutting-edge optoelectronic devices, including quantum optical communication, 3D image processing, and sensing applications. Here, we report an optical polarization-resolving photodetector (PD) fabricated from multilayer semiconducting CrSBr single crystals with high structural anisotropy. We have demonstrated self-powered photodetection due to the formation of Schottky junctions at the Au-CrSBr interfaces, which also caused the photocurrent to display a position-sensitive and binary nature. The self-biased CrSBr PD showed a photoresponsivity of similar to 0.26 mA/W with a detectivity of 3.4 x 10(8 )Jones at 514 nm excitation of fluency (0.42 mW/cm(2)) under ambient conditions. The optical polarization-induced photoresponse exhibits a large dichroic ratio of 3.4, while the polarization is set along the a- and the b-axes of single-crystalline CrSBr. The PD also showed excellent stability, retaining >95% of the initial photoresponsivity in ambient conditions for more than five months without encapsulation. Thus, we demonstrate CrSBr as a fascinating material for ultralow-powered optical polarization-resolving optoelectronic devices for cutting-edge technology.
Klasifikace
Druh
J<sub>imp</sub> - Článek v periodiku v databázi Web of Science
CEP obor
—
OECD FORD obor
10402 - Inorganic and nuclear chemistry
Návaznosti výsledku
Projekt
<a href="/cs/project/GX20-08633X" target="_blank" >GX20-08633X: ÅrchitektRonika dvoudimenzionálních krystalů se synergií chirálních elektrochemických a optoelektronických konceptů na Å- škále</a><br>
Návaznosti
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Ostatní
Rok uplatnění
2023
Kód důvěrnosti údajů
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Údaje specifické pro druh výsledku
Název periodika
ACS Applied Materials & Interfaces
ISSN
1944-8244
e-ISSN
1944-8252
Svazek periodika
16
Číslo periodika v rámci svazku
1
Stát vydavatele periodika
US - Spojené státy americké
Počet stran výsledku
11
Strana od-do
1033-1043
Kód UT WoS článku
001140897400001
EID výsledku v databázi Scopus
2-s2.0-85181826871