Highly sensitive broadband binary photoresponse in gateless epitaxial graphene on 4H-SiC

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61388955%3A_____%2F21%3A00544608" target="_blank" >RIV/61388955:_____/21:00544608 - isvavai.cz</a>

Výsledek na webu

<a href="http://hdl.handle.net/11104/0321442" target="_blank" >http://hdl.handle.net/11104/0321442</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.carbon.2021.07.098" target="_blank" >10.1016/j.carbon.2021.07.098</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Highly sensitive broadband binary photoresponse in gateless epitaxial graphene on 4H-SiC

Popis výsledku v původním jazyce

Due to weak light-matter interaction, standard chemical vapor deposition (CVD)/exfoliated single-layer graphene-based photodetectors show low photoresponsivity (on the order of mA/W). However, epitaxial graphene (EG) offers a more viable approach for obtaining devices with good photoresponsivity. EG on 4H–SiC also hosts an interfacial buffer layer (IBL), which is the source of electron carriers applicable to quantum optoelectronic devices. We utilize these properties to demonstrate a gate-free, planar EG/4H–SiC-based device that enables us to observe the positive photoresponse for (405–532) nm and negative photoresponse for (632–980) nm laser excitation. The broadband binary photoresponse mainly originates from the energy band alignment of the IBL/EG interface and the highly sensitive work function of the EG. We find that the photoresponsivity of the device is > 10 A/W under 405 nm of power density 7.96 mW/cm2 at 1 V applied bias, which is three orders of magnitude greater than the obtained values of CVD/exfoliated graphene and higher than the required value for practical applications. These results path the way for selective light-triggered logic devices based on EG and can open a new window for broadband photodetection.

Název v anglickém jazyce

Highly sensitive broadband binary photoresponse in gateless epitaxial graphene on 4H-SiC

Popis výsledku anglicky

Due to weak light-matter interaction, standard chemical vapor deposition (CVD)/exfoliated single-layer graphene-based photodetectors show low photoresponsivity (on the order of mA/W). However, epitaxial graphene (EG) offers a more viable approach for obtaining devices with good photoresponsivity. EG on 4H–SiC also hosts an interfacial buffer layer (IBL), which is the source of electron carriers applicable to quantum optoelectronic devices. We utilize these properties to demonstrate a gate-free, planar EG/4H–SiC-based device that enables us to observe the positive photoresponse for (405–532) nm and negative photoresponse for (632–980) nm laser excitation. The broadband binary photoresponse mainly originates from the energy band alignment of the IBL/EG interface and the highly sensitive work function of the EG. We find that the photoresponsivity of the device is > 10 A/W under 405 nm of power density 7.96 mW/cm2 at 1 V applied bias, which is three orders of magnitude greater than the obtained values of CVD/exfoliated graphene and higher than the required value for practical applications. These results path the way for selective light-triggered logic devices based on EG and can open a new window for broadband photodetection.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10403 - Physical chemistry

Projekt

<a href="/cs/project/GX20-08633X" target="_blank" >GX20-08633X: ÅrchitektRonika dvoudimenzionálních krystalů se synergií chirálních elektrochemických a optoelektronických konceptů na Å- škále</a><br>

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2021

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Carbon

ISSN

0008-6223

e-ISSN

1873-3891

Svazek periodika

184

Číslo periodika v rámci svazku

OCT 2021

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

10

Strana od-do

72-81

Kód UT WoS článku

000704334600007

EID výsledku v databázi Scopus

2-s2.0-85112361716