Graphene-insulator-metal diodes: Enhanced dielectric strength of the Al2O3 barrier

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F24%3A10487246" target="_blank" >RIV/00216208:11320/24:10487246 - isvavai.cz</a>

Výsledek na webu

<a href="https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=jlSBiF7Zpy" target="_blank" >https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=jlSBiF7Zpy</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1063/5.0223763" target="_blank" >10.1063/5.0223763</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Graphene-insulator-metal diodes: Enhanced dielectric strength of the Al2O3 barrier

Popis výsledku v původním jazyce

We studied the transport properties of graphene-insulator-metal tunneling diodes. Two sets of tunneling diodes with Ti-Cu and Cr-Au top contacts are fabricated. Transport measurements showed state-of-the-art non-linearity and a critical influence of the top metals on the dielectric strength of the tunneling barrier. X-ray photoelectron spectroscopy indicated two methods for enhancing the dielectric strength of the tunneling barrier. These are the optimized seed layers for the growth of high-quality conformal insulators and the selection of appropriate top metal layers with a small diffusion coefficient and electromigration into the Al(2)O(3) barrier. The Cr-Au top contact provides superior characteristics to the Ti-Cu metallization. X-ray photoelectron spectroscopy showed significant diffusion of titanium during the Al(2)O(3) growth and the formation of titanium inclusions after annealing. Chromium diffusion is slower than that of titanium, making chromium contact more suitable for the reliable operation of tunneling diodes. As a result, we demonstrate a 40% improvement in the dielectric strength of the tunneling barrier compared to state-of-the-art metal-insulator-metal diodes.

Název v anglickém jazyce

Graphene-insulator-metal diodes: Enhanced dielectric strength of the Al2O3 barrier

Popis výsledku anglicky

We studied the transport properties of graphene-insulator-metal tunneling diodes. Two sets of tunneling diodes with Ti-Cu and Cr-Au top contacts are fabricated. Transport measurements showed state-of-the-art non-linearity and a critical influence of the top metals on the dielectric strength of the tunneling barrier. X-ray photoelectron spectroscopy indicated two methods for enhancing the dielectric strength of the tunneling barrier. These are the optimized seed layers for the growth of high-quality conformal insulators and the selection of appropriate top metal layers with a small diffusion coefficient and electromigration into the Al(2)O(3) barrier. The Cr-Au top contact provides superior characteristics to the Ti-Cu metallization. X-ray photoelectron spectroscopy showed significant diffusion of titanium during the Al(2)O(3) growth and the formation of titanium inclusions after annealing. Chromium diffusion is slower than that of titanium, making chromium contact more suitable for the reliable operation of tunneling diodes. As a result, we demonstrate a 40% improvement in the dielectric strength of the tunneling barrier compared to state-of-the-art metal-insulator-metal diodes.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

<a href="/cs/project/GC21-28470J" target="_blank" >GC21-28470J: Ultra-rychlé detektory pro časově rozlišenou terahertzovou spektroskopii</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2024

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

AIP Advances

ISSN

2158-3226

e-ISSN

2158-3226

Svazek periodika

14

Číslo periodika v rámci svazku

9

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

9

Strana od-do

095207

Kód UT WoS článku

001307991400004

EID výsledku v databázi Scopus

2-s2.0-85203406537