2D analysis of sputtered species transport in high-power impulse magnetron sputtering (HiPIMS) discharge

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F24%3A10494508" target="_blank" >RIV/00216208:11320/24:10494508 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/68378271:_____/24:00599217

Výsledek na webu

<a href="https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=EBE~r7dECz" target="_blank" >https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=EBE~r7dECz</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1063/5.0198423" target="_blank" >10.1063/5.0198423</a>

Jazyk výsledku

angličtina

Název v původním jazyce

2D analysis of sputtered species transport in high-power impulse magnetron sputtering (HiPIMS) discharge

Popis výsledku v původním jazyce

Among the numerous advantages of the high-power impulse magnetron sputtering (HiPIMS) technique, the most important is the enhanced ionization degree of sputtered species contributing to the film growth. Consequently, the quality of deposited thin films is highly improved. Still, the optimization process is challenging due to the complexity associated with the intricate transport of the sputtered species, ionized or neutrals. The scarce knowledge available on the spatial distribution of these species when operating a HiPIMS discharge makes the quantitative prediction of any deposition feature particularly difficult. In this paper, we discuss the influence of experimentally controllable quantities, such as gas pressure and target current density, on the transport of sputtered titanium in non-reactive (argon) HiPIMS, namely, on the behavior of metal atoms and metal ion fluxes intercepting the substrate. Systematic quantitative measurements were performed in a diameter normal plane on a circular planar target. Hence, the 2D spatial distribution of the ionized flux fraction (IFF) and the total flux of titanium sputtered particles (deposition rate) are evaluated by biasing a quartz crystal microbalance equipped with an electron magnetic filter. The wide range of parameters we examined allows us to predict and optimize the flux of sputtered species based on complete mapping of the IFF of sputtered particles.

Název v anglickém jazyce

2D analysis of sputtered species transport in high-power impulse magnetron sputtering (HiPIMS) discharge

Popis výsledku anglicky

Among the numerous advantages of the high-power impulse magnetron sputtering (HiPIMS) technique, the most important is the enhanced ionization degree of sputtered species contributing to the film growth. Consequently, the quality of deposited thin films is highly improved. Still, the optimization process is challenging due to the complexity associated with the intricate transport of the sputtered species, ionized or neutrals. The scarce knowledge available on the spatial distribution of these species when operating a HiPIMS discharge makes the quantitative prediction of any deposition feature particularly difficult. In this paper, we discuss the influence of experimentally controllable quantities, such as gas pressure and target current density, on the transport of sputtered titanium in non-reactive (argon) HiPIMS, namely, on the behavior of metal atoms and metal ion fluxes intercepting the substrate. Systematic quantitative measurements were performed in a diameter normal plane on a circular planar target. Hence, the 2D spatial distribution of the ionized flux fraction (IFF) and the total flux of titanium sputtered particles (deposition rate) are evaluated by biasing a quartz crystal microbalance equipped with an electron magnetic filter. The wide range of parameters we examined allows us to predict and optimize the flux of sputtered species based on complete mapping of the IFF of sputtered particles.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10305 - Fluids and plasma physics (including surface physics)

Projekt

—

Návaznosti

S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2024

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Applied Physics

ISSN

0021-8979

e-ISSN

1089-7550

Svazek periodika

135

Číslo periodika v rámci svazku

17

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

14

Strana od-do

173302

Kód UT WoS článku

001215993100005

EID výsledku v databázi Scopus

2-s2.0-85192432903