Trapped Fluorine Enables Thermally Stable Broadband Photodetection in Graphene/Fluorinated Graphene Heterostructure

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F25%3A10506246" target="_blank" >RIV/00216208:11320/25:10506246 - isvavai.cz</a>

Výsledek na webu

<a href="https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=RVL91AcDfG" target="_blank" >https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=RVL91AcDfG</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1002/admt.202501241" target="_blank" >10.1002/admt.202501241</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Trapped Fluorine Enables Thermally Stable Broadband Photodetection in Graphene/Fluorinated Graphene Heterostructure

Popis výsledku v původním jazyce

Fluorinated graphene holds significant promise for optoelectronic applications, yet the instability of carbon-fluorine (C-F) bonds has limited its practical use. This study investigates the long-term operational and thermal stability of a photodetector containing graphene/fluorinated graphene heterostructure (Gr/F-Gr HS). In this design, the top graphene serves as a capping layer that stabilizes fluorine atoms in the bottom fluorinated graphene (F-Gr) via interlayer interactions and suppresses fluorine diffusion. This fluorine-trapping configuration effectively passivates the defects in the F-Gr layer, enhancing both the drain current and optical absorption without altering the device structure. The photodetector achieves &gt; 10(4) A/W responsivity, approximate to 10(12) Jones detectivity, and sub-200 mu s response, enabling frequency resolution up to 1 kHz across a broad spectral wavelength range (300-1150 nm). The device retains approximate to 86% of its initial photocurrent after one year in ambient conditions and remains stable up to 200 degrees C. All-atom molecular dynamics simulations support the experimental results, revealing that the capping layer stabilizes C-F bonds by suppressing fluorine migration and enabling interlayer fluorine redistribution. Together, these findings highlight the superior thermal stability of Gr/F-Gr, reinforcing its promise for advanced optoelectronic applications.

Název v anglickém jazyce

Trapped Fluorine Enables Thermally Stable Broadband Photodetection in Graphene/Fluorinated Graphene Heterostructure

Popis výsledku anglicky

Fluorinated graphene holds significant promise for optoelectronic applications, yet the instability of carbon-fluorine (C-F) bonds has limited its practical use. This study investigates the long-term operational and thermal stability of a photodetector containing graphene/fluorinated graphene heterostructure (Gr/F-Gr HS). In this design, the top graphene serves as a capping layer that stabilizes fluorine atoms in the bottom fluorinated graphene (F-Gr) via interlayer interactions and suppresses fluorine diffusion. This fluorine-trapping configuration effectively passivates the defects in the F-Gr layer, enhancing both the drain current and optical absorption without altering the device structure. The photodetector achieves &gt; 10(4) A/W responsivity, approximate to 10(12) Jones detectivity, and sub-200 mu s response, enabling frequency resolution up to 1 kHz across a broad spectral wavelength range (300-1150 nm). The device retains approximate to 86% of its initial photocurrent after one year in ambient conditions and remains stable up to 200 degrees C. All-atom molecular dynamics simulations support the experimental results, revealing that the capping layer stabilizes C-F bonds by suppressing fluorine migration and enabling interlayer fluorine redistribution. Together, these findings highlight the superior thermal stability of Gr/F-Gr, reinforcing its promise for advanced optoelectronic applications.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10402 - Inorganic and nuclear chemistry

Projekt

<a href="/cs/project/EH22_008%2F0004558" target="_blank" >EH22_008/0004558: Pokročilé víceškálové materiály pro nosné klíčové technologie</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2025

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Advanced Materials Technologies

ISSN

2365-709X

e-ISSN

2365-709X

Svazek periodika

2025

Číslo periodika v rámci svazku

November

Stát vydavatele periodika

DE - Spolková republika Německo

Počet stran výsledku

10

Strana od-do

e01241

Kód UT WoS článku

001613973900001

EID výsledku v databázi Scopus

2-s2.0-105021525700