Unraveling the Nanosecond Photoresponse of Layered HgPSe3

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F25%3A10508595" target="_blank" >RIV/00216208:11320/25:10508595 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/60461373:22310/25:43932192

Výsledek na webu

<a href="https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=xl5gpphrCB" target="_blank" >https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=xl5gpphrCB</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1021/acs.nanolett.4c04945" target="_blank" >10.1021/acs.nanolett.4c04945</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Unraveling the Nanosecond Photoresponse of Layered HgPSe3

Popis výsledku v původním jazyce

Chalcogen phosphates of transition metals make up a well-known group of antiferromagnetic semiconductors with the general formula MPX(3), where M represents a transition metal and X is a chalcogen, either sulfur or selenium. Most of these compounds adopt a similar structure; however, mercury phosphochalcogenides present an exception with their unique van der Waals layered structure. Transition metal chalcogenides are highly appealing materials for photodetectors due to their exceptional optoelectronic properties. Among them, HgPSe(3), a layered van der Waals phosphoselenide, shows promise for photodetection over a broad spectral range, from visible light to X-rays. Despite this, the electronic processes governing its photoresponse remain unclear. In this study, we demonstrate a nanosecond response time of a HgPSe(3)-based photodetector to visible light and gain deeper insights into the underlying charge carrier dynamics through a comprehensive investigation using complementary time-resolved experimental techniques. Our findings on the role of carrier traps provide a potential pathway for optimizing optoelectronic device performance.

Název v anglickém jazyce

Unraveling the Nanosecond Photoresponse of Layered HgPSe3

Popis výsledku anglicky

Chalcogen phosphates of transition metals make up a well-known group of antiferromagnetic semiconductors with the general formula MPX(3), where M represents a transition metal and X is a chalcogen, either sulfur or selenium. Most of these compounds adopt a similar structure; however, mercury phosphochalcogenides present an exception with their unique van der Waals layered structure. Transition metal chalcogenides are highly appealing materials for photodetectors due to their exceptional optoelectronic properties. Among them, HgPSe(3), a layered van der Waals phosphoselenide, shows promise for photodetection over a broad spectral range, from visible light to X-rays. Despite this, the electronic processes governing its photoresponse remain unclear. In this study, we demonstrate a nanosecond response time of a HgPSe(3)-based photodetector to visible light and gain deeper insights into the underlying charge carrier dynamics through a comprehensive investigation using complementary time-resolved experimental techniques. Our findings on the role of carrier traps provide a potential pathway for optimizing optoelectronic device performance.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2025

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Nano Letters

ISSN

1530-6984

e-ISSN

1530-6992

Svazek periodika

25

Číslo periodika v rámci svazku

8

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

6

Strana od-do

3053-3058

Kód UT WoS článku

001419649000001

EID výsledku v databázi Scopus

2-s2.0-85217947212