Light-Induced Surface Recombination Suppression, Carrier Lifetime Improvement, and Deep Defect Formation in Lead Halide Perovskites

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F25%3A10508666" target="_blank" >RIV/00216208:11320/25:10508666 - isvavai.cz</a>

Výsledek na webu

<a href="https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=Mbmto-U01l" target="_blank" >https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=Mbmto-U01l</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1002/lpor.202401904" target="_blank" >10.1002/lpor.202401904</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Light-Induced Surface Recombination Suppression, Carrier Lifetime Improvement, and Deep Defect Formation in Lead Halide Perovskites

Popis výsledku v původním jazyce

Lead halide perovskites are promising materials in a wide range of optoelectronic devices. The internal instabilities of perovskites under illumination, however, hinder their application. Here, light-induced changes in CH(3)NH(3)PbBr(3) single crystals are studied, focusing on charge carrier transport properties and deep defect evolution. Using laser-induced transient current technique measurements under steady-state illumination enables the distinction of electron and hole conductivity. An improvement in charge carrier collection is observed stemming from reduced surface recombination and increased hole lifetime. Surprisingly, despite the overall optimization of carrier transport, the simultaneous formation of deep defects under illumination is recorded via photo-thermal deflection spectroscopy. Empirical models are proposed to rationalize all light-induced changes. The explanations are based on strong electron trapping, ion migration, and passivation of strong recombination centers by light-induced deep defects.

Název v anglickém jazyce

Light-Induced Surface Recombination Suppression, Carrier Lifetime Improvement, and Deep Defect Formation in Lead Halide Perovskites

Popis výsledku anglicky

Lead halide perovskites are promising materials in a wide range of optoelectronic devices. The internal instabilities of perovskites under illumination, however, hinder their application. Here, light-induced changes in CH(3)NH(3)PbBr(3) single crystals are studied, focusing on charge carrier transport properties and deep defect evolution. Using laser-induced transient current technique measurements under steady-state illumination enables the distinction of electron and hole conductivity. An improvement in charge carrier collection is observed stemming from reduced surface recombination and increased hole lifetime. Surprisingly, despite the overall optimization of carrier transport, the simultaneous formation of deep defects under illumination is recorded via photo-thermal deflection spectroscopy. Empirical models are proposed to rationalize all light-induced changes. The explanations are based on strong electron trapping, ion migration, and passivation of strong recombination centers by light-induced deep defects.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2025

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Laser and Photonics Reviews

ISSN

1863-8899

e-ISSN

1863-8899

Svazek periodika

19

Číslo periodika v rámci svazku

18

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

10

Strana od-do

2401904

Kód UT WoS článku

001502479300001

EID výsledku v databázi Scopus

2-s2.0-105007545855