Light‐induced surface recombination suppression, carrier lifetime improvement, and deep defect formation in lead halide perovskites

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F25%3A00640377" target="_blank" >RIV/68378271:_____/25:00640377 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/68407700:21230/25:00383781

Výsledek na webu

<a href="https://hdl.handle.net/11104/0370789" target="_blank" >https://hdl.handle.net/11104/0370789</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1002/lpor.202401904" target="_blank" >10.1002/lpor.202401904</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Light‐induced surface recombination suppression, carrier lifetime improvement, and deep defect formation in lead halide perovskites

Popis výsledku v původním jazyce

Lead halide perovskites are promising materials in a wide range of optoelectronic devices. The internal instabilities of perovskites under illumination, however, hinder their application. Here, we study the light-induced changes in CH3NH3PbBr3 single crystals, focusing on charge carrier transport properties and deep defect evolution. Using laser-induced transient current technique measurements under steady-state illumination enables us to distinguish electron and hole conductivity. We observe an improvement in charge carrier collection stemming from reduced surface recombination and increased hole lifetime. Surprisingly, despite the overall optimization of carrier transport, we record the simultaneous formation of deep defects under illumination via photo-thermal deflection spectroscopy. Empirical models are proposed to rationalize all light-induced changes.

Název v anglickém jazyce

Light‐induced surface recombination suppression, carrier lifetime improvement, and deep defect formation in lead halide perovskites

Popis výsledku anglicky

Lead halide perovskites are promising materials in a wide range of optoelectronic devices. The internal instabilities of perovskites under illumination, however, hinder their application. Here, we study the light-induced changes in CH3NH3PbBr3 single crystals, focusing on charge carrier transport properties and deep defect evolution. Using laser-induced transient current technique measurements under steady-state illumination enables us to distinguish electron and hole conductivity. We observe an improvement in charge carrier collection stemming from reduced surface recombination and increased hole lifetime. Surprisingly, despite the overall optimization of carrier transport, we record the simultaneous formation of deep defects under illumination via photo-thermal deflection spectroscopy. Empirical models are proposed to rationalize all light-induced changes.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2025

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Laser & Photonics Reviews

ISSN

1863-8880

e-ISSN

1863-8899

Svazek periodika

19

Číslo periodika v rámci svazku

18

Stát vydavatele periodika

DE - Spolková republika Německo

Počet stran výsledku

10

Strana od-do

2401904

Kód UT WoS článku

001502479300001

EID výsledku v databázi Scopus

2-s2.0-105007545855