XPS and Ellipsometric Study of DLC/silicon interface

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216224%3A14310%2F01%3A00004313" target="_blank" >RIV/00216224:14310/01:00004313 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/00216208:11320/01:00105744

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

XPS and Ellipsometric Study of DLC/silicon interface

Popis výsledku v původním jazyce

Diamond-like carbon (DLC) films were prepared by plasma enhanced CVD from the mixture of methane and argon on silicon substrates. Films were characterized by multi-sample modification of variable angle spectroscopic ellipsometry. The ellipsometry showedthat there is a transition interlayer between the DLC film and the silicon substrate that cannot be attributed to a thin silicon dioxide layer but rather to amorphous silicon and/or modified oxide layer. TRIM calculations revealed that argon or carbon ions could not produce a significant layer of amorphous silicon because the depth of target atom displacements is bellow the thickness of a native oxide layer. The chemical composition of a DLC film profile including a DLC/silicon interface was studied byX-ray photoelectron spectroscopy (XPS) coupled with an argon sputtering of the 34~nm thick DLC film. The DLC/silicon interface composed from less than 6 % of oxygen and gradually decreasing and increasing carbon and silicon percentage, re

Název v anglickém jazyce

XPS and Ellipsometric Study of DLC/silicon interface

Popis výsledku anglicky

Diamond-like carbon (DLC) films were prepared by plasma enhanced CVD from the mixture of methane and argon on silicon substrates. Films were characterized by multi-sample modification of variable angle spectroscopic ellipsometry. The ellipsometry showedthat there is a transition interlayer between the DLC film and the silicon substrate that cannot be attributed to a thin silicon dioxide layer but rather to amorphous silicon and/or modified oxide layer. TRIM calculations revealed that argon or carbon ions could not produce a significant layer of amorphous silicon because the depth of target atom displacements is bellow the thickness of a native oxide layer. The chemical composition of a DLC film profile including a DLC/silicon interface was studied byX-ray photoelectron spectroscopy (XPS) coupled with an argon sputtering of the 34~nm thick DLC film. The DLC/silicon interface composed from less than 6 % of oxygen and gradually decreasing and increasing carbon and silicon percentage, re

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BL - Fyzika plasmatu a výboje v plynech

OECD FORD obor

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Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2001

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Vacuum

ISSN

0042-207X

e-ISSN

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Svazek periodika

61

Číslo periodika v rámci svazku

1

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

5

Strana od-do

269

Kód UT WoS článku

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EID výsledku v databázi Scopus

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